Simulation Study of HEMT Structures with HfO2 Cap Layer for Mitigating Inverse Piezoelectric Effect Related Device Failures

Deepthi Nagulapally, Ravindra Joshi, Aswini K Pradhan

Research output: Contribution to journalArticle

Abstract

The Inverse Piezoelectric Effect (IPE) is thought to contribute to possible device failure of GaN High Electron Mobility Transistors (HEMTs). Here we focus on a simulation study to probe the possible mitigation of the IPE by reducing the internal electric fields and related elastic energy through the use of high-k materials. Inclusion of a HfO2 “cap layer” above the AlGaN barrier particularly with a partial mesa structure is shown to have potential advantages. Simulations reveal even greater reductions in the internal electric fields by using “field plates” in concert with high-k oxides.
Original languageEnglish
Pages (from-to)017103 (5 pages)
JournalAIP Advances (international Journal)
DOIs
StatePublished - Jan 7 2015

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