Simulation studies of persistent photoconductivity and filamentary conduction in opposed contact semi-insulating GaAs high power switches

R. P. Joshi, P. Kayasit, N. Islam, E. Schamiloglu, C. B. Fleddermann, J. Schoenberg

Research output: Contribution to journalArticle

14 Scopus citations

Abstract

A self-consistent, two-dimensional, time-dependent, drift-diffusion model is developed to simulate the response of high power photoconductive switches. Effects of spatial inhomogeneities associated with the contact barrier potential are incorporated and shown to foster filamentation. Results of the dark current match the available experiment data. Persistent photoconductivity is shown to arise at a high bias even under the conditions of spatial uniformity. Filamentary currents require an inherent spatial inhomogeneity, and are more likely to occur for low optical excitation. Under strong uniform illumination, the spatial nonuniformities were quenched as a result of a polarization-induced collapse in the internal fields. However, strong electric fields resulting at the contacts create a bipolar plasma, and hence, a virtual "double injection."

Original languageEnglish
Pages (from-to)3833-3843
Number of pages11
JournalJournal of Applied Physics
Volume86
Issue number7
DOIs
StatePublished - Oct 1 1999

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