Simulation studies of lateral and opposed contact GaAs photoconductive switch geometry for high power, UWB microwave applications

Naz E. Islam; Edl Schamiloglu; C. B. Fleddermann; R. P. Joshi; L. Zheng

Simulation studies of lateral and opposed contact GaAs photoconductive switch geometry for high power, UWB microwave applications

Naz E. Islam, Edl Schamiloglu, C. B. Fleddermann, R. P. Joshi, L. Zheng

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

High-gain gallium arsenide (GaAs) photoconductive semiconductor switches (PCSS) were studied using a laser beam as the triggering source. The aim of the study is to identify the parameters that would optimize the switch lifetime and hold-off voltage. The PCSS is an integrated component of a parallel plate radiation source, used for driving a transverse electromagnetic (TEM) horn impulse-radiating antenna. Specifically, the response of a trap filled semiconductor with varying contact placements and material properties were simulated. Beam power and its incidence locations were also varied during the simulation process.

Original language	English
Pages (from-to)	296
Number of pages	1
Journal	IEEE International Conference on Plasma Science
State	Published - 1998
Event	Proceedings of the 1998 IEEE International Conference on Plasma Science - Raleigh, NC, USA Duration: Jun 1 1998 → Jun 4 1998

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@article{969ba109c07a40ae88cc8f29301c6bc2,

title = "Simulation studies of lateral and opposed contact GaAs photoconductive switch geometry for high power, UWB microwave applications",

abstract = "High-gain gallium arsenide (GaAs) photoconductive semiconductor switches (PCSS) were studied using a laser beam as the triggering source. The aim of the study is to identify the parameters that would optimize the switch lifetime and hold-off voltage. The PCSS is an integrated component of a parallel plate radiation source, used for driving a transverse electromagnetic (TEM) horn impulse-radiating antenna. Specifically, the response of a trap filled semiconductor with varying contact placements and material properties were simulated. Beam power and its incidence locations were also varied during the simulation process.",

author = "Islam, {Naz E.} and Edl Schamiloglu and Fleddermann, {C. B.} and Joshi, {R. P.} and L. Zheng",

year = "1998",

language = "English",

pages = "296",

journal = "IEEE International Conference on Plasma Science",

issn = "0730-9244",

note = "Proceedings of the 1998 IEEE International Conference on Plasma Science ; Conference date: 01-06-1998 Through 04-06-1998",

}

TY - JOUR

T1 - Simulation studies of lateral and opposed contact GaAs photoconductive switch geometry for high power, UWB microwave applications

AU - Islam, Naz E.

AU - Schamiloglu, Edl

AU - Fleddermann, C. B.

AU - Joshi, R. P.

AU - Zheng, L.

PY - 1998

Y1 - 1998

N2 - High-gain gallium arsenide (GaAs) photoconductive semiconductor switches (PCSS) were studied using a laser beam as the triggering source. The aim of the study is to identify the parameters that would optimize the switch lifetime and hold-off voltage. The PCSS is an integrated component of a parallel plate radiation source, used for driving a transverse electromagnetic (TEM) horn impulse-radiating antenna. Specifically, the response of a trap filled semiconductor with varying contact placements and material properties were simulated. Beam power and its incidence locations were also varied during the simulation process.

AB - High-gain gallium arsenide (GaAs) photoconductive semiconductor switches (PCSS) were studied using a laser beam as the triggering source. The aim of the study is to identify the parameters that would optimize the switch lifetime and hold-off voltage. The PCSS is an integrated component of a parallel plate radiation source, used for driving a transverse electromagnetic (TEM) horn impulse-radiating antenna. Specifically, the response of a trap filled semiconductor with varying contact placements and material properties were simulated. Beam power and its incidence locations were also varied during the simulation process.

UR - http://www.scopus.com/inward/record.url?scp=0031631747&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0031631747

SN - 0730-9244

SP - 296

JO - IEEE International Conference on Plasma Science

JF - IEEE International Conference on Plasma Science

T2 - Proceedings of the 1998 IEEE International Conference on Plasma Science

Y2 - 1 June 1998 through 4 June 1998

ER -

Simulation studies of lateral and opposed contact GaAs photoconductive switch geometry for high power, UWB microwave applications

Abstract

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