High-gain gallium arsenide (GaAs) photoconductive semiconductor switches (PCSS) were studied using a laser beam as the triggering source. The aim of the study is to identify the parameters that would optimize the switch lifetime and hold-off voltage. The PCSS is an integrated component of a parallel plate radiation source, used for driving a transverse electromagnetic (TEM) horn impulse-radiating antenna. Specifically, the response of a trap filled semiconductor with varying contact placements and material properties were simulated. Beam power and its incidence locations were also varied during the simulation process.
|Number of pages||1|
|Journal||IEEE International Conference on Plasma Science|
|State||Published - 1998|
|Event||Proceedings of the 1998 IEEE International Conference on Plasma Science - Raleigh, NC, USA|
Duration: Jun 1 1998 → Jun 4 1998