Simulation studies of lateral and opposed contact GaAs photoconductive switch geometry for high power, UWB microwave applications

Naz E. Islam, Edl Schamiloglu, C. B. Fleddermann, R. P. Joshi, L. Zheng

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations

Abstract

High-gain gallium arsenide (GaAs) photoconductive semiconductor switches (PCSS) were studied using a laser beam as the triggering source. The aim of the study is to identify the parameters that would optimize the switch lifetime and hold-off voltage. The PCSS is an integrated component of a parallel plate radiation source, used for driving a transverse electromagnetic (TEM) horn impulse-radiating antenna. Specifically, the response of a trap filled semiconductor with varying contact placements and material properties were simulated. Beam power and its incidence locations were also varied during the simulation process.

Original languageEnglish
Pages (from-to)296
Number of pages1
JournalIEEE International Conference on Plasma Science
StatePublished - 1998
EventProceedings of the 1998 IEEE International Conference on Plasma Science - Raleigh, NC, USA
Duration: Jun 1 1998Jun 4 1998

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