Simulation, modeling, and experimental studies of high-gain gallium arsenide photoconductive switches for ultra-wideband applications

E. Schamiloglu, N. E. Islam, C. B. Fleddermann, B. Shipley, R. P. Joshi, L. Zheng

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper describes recent results to better understand the physics of operation of high-gain photoconductive semiconductor switches (PCSSs). Computer simulation is a viable tool in the study of the physics of device operation. Such a study of the PCSS will lead to a better understanding of the device mechanisms and may result in the diagnosis of problems and design of a better switch for ultra-wideband high power microwave (HPM) applications. We describe simulation results for a semi-insulating GaAs PCSS switch for testing ultra-wideband (UWB) radiation sources.

Original languageEnglish
Title of host publicationUltra-Wideband Short-Pulse Electromagnetics 4
EditorsEhud Heyman, Benjamin Mandelbaum, Joseph Shiloh
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages221-228
Number of pages8
ISBN (Electronic)0306462060, 9780306462061
DOIs
StatePublished - 1998
Event4th Conference on Ultra-Wideband Short-Pulse Electromagnetics, UWBSP 1998 - Tel-Aviv, Israel
Duration: Jun 14 1999Jun 19 1999

Publication series

NameUltra-Wideband Short-Pulse Electromagnetics 4
Volume1998-June

Conference

Conference4th Conference on Ultra-Wideband Short-Pulse Electromagnetics, UWBSP 1998
CountryIsrael
CityTel-Aviv
Period06/14/9906/19/99

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