Simulation and design trade-off analysis of 15 kV SiC SGTO thyristor during extreme pulsed overcurrent conditions

James A. Schrock, Emily A. Hirsch, Argenis Bilbao, Shelby Lacouture, William Ray, Stephen Bayne, Michael Giesselmann, Aderinto Ogunniyi, Heather O'Brien

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Silicon carbide Super Gate Turn-Off (SGTO) thyristors are an advanced technology for increasing the power density of high voltage pulsed power or power electronic systems. However, the transient characteristics and failure modes of these devices have to be further understood. This paper presents the Atlas TCAD simulation of a 15 kV SiC SGTO thyristor during extreme pulsed overcurrent conditions. The simulated device is first validated against dc measurements of a physical device. The device is then simulated at various pulse current amplitudes using a 10 stage 100 μs PFN. In addition, a tradeoff study for the drift region and anode mesa width is performed.

Original languageEnglish
Title of host publication2016 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages558-562
Number of pages5
ISBN (Electronic)9781509023547
DOIs
StatePublished - Aug 17 2017
Event2016 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2016 - San Francisco, United States
Duration: Jul 5 2016Jul 9 2016

Publication series

Name2016 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2016

Conference

Conference2016 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2016
CountryUnited States
CitySan Francisco
Period07/5/1607/9/16

Keywords

  • SGTO
  • SiC
  • Silicon carbide
  • Thyristor

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