@inproceedings{92f4573787d645a8b0a831bd81d8bc05,
title = "Simulation and design trade-off analysis of 15 kV SiC SGTO thyristor during extreme pulsed overcurrent conditions",
abstract = "Silicon carbide Super Gate Turn-Off (SGTO) thyristors are an advanced technology for increasing the power density of high voltage pulsed power or power electronic systems. However, the transient characteristics and failure modes of these devices have to be further understood. This paper presents the Atlas TCAD simulation of a 15 kV SiC SGTO thyristor during extreme pulsed overcurrent conditions. The simulated device is first validated against dc measurements of a physical device. The device is then simulated at various pulse current amplitudes using a 10 stage 100 μs PFN. In addition, a tradeoff study for the drift region and anode mesa width is performed.",
keywords = "SGTO, SiC, Silicon carbide, Thyristor",
author = "Schrock, {James A.} and Hirsch, {Emily A.} and Argenis Bilbao and Shelby Lacouture and William Ray and Stephen Bayne and Michael Giesselmann and Aderinto Ogunniyi and Heather O'Brien",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 2016 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2016 ; Conference date: 05-07-2016 Through 09-07-2016",
year = "2017",
month = aug,
day = "17",
doi = "10.1109/IPMHVC.2016.8012878",
language = "English",
series = "2016 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2016",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "558--562",
booktitle = "2016 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2016",
}