SIMS quantitative depth profiling of matrix elements in semiconductor layers

G. Guryanov, T. P. St. Clair, R. Bhat, C. Caneau, S. Nikishin, B. Borisov, A. Budrevich

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

A new SIMS approach is proposed for quantified depth profiling of III-V semiconductor alloys. We show that the ratio of MCs + ion intensities to the sum of all element intensities (M 1 Cs + + M 2 Cs + ...) from semiconductor alloys gives accurate elemental mole fraction when elements from the same periodic group are considered. Results obtained using SIMS show good agreement with data acquired using XPS and RBS.

Original languageEnglish
Pages (from-to)7208-7210
Number of pages3
JournalApplied Surface Science
Volume252
Issue number19
DOIs
StatePublished - Jul 30 2006

Keywords

  • Quantification
  • RBS
  • SIMS
  • Semiconductor compound
  • XPS

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  • Cite this

    Guryanov, G., St. Clair, T. P., Bhat, R., Caneau, C., Nikishin, S., Borisov, B., & Budrevich, A. (2006). SIMS quantitative depth profiling of matrix elements in semiconductor layers. Applied Surface Science, 252(19), 7208-7210. https://doi.org/10.1016/j.apsusc.2006.02.254