Silylation using a supercritical carbon dioxide medium to repair plasma-damaged porous organosilicate films

B. Lahlouh, J. A. Lubguban, G. Sivaraman, R. Gale, S. Gangopadhyay

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28 Scopus citations

Abstract

Supercritical CO2 (SCCO2) was used to facilitate silylation in repairing oxygen plasma-induced damage during photoresist stripping in porous organosilicate films. Samples with open and closed-pore morphologies prepared by sacrificial-porogen approach were exposed to O 2 plasma to simulate damage. These samples were pretreated with 10% butanol in SCCO2 (wt/wt) and were silylated with 10% trimethylchlorosilane in SCCO2 (wt/wt). The results showed that this technique was effective in repairing plasma damage in films with open-pore morphology but was less effective in closed-pore films. However, the surface hydrophobicity for both films was recovered after treatment.

Original languageEnglish
Article number4
Pages (from-to)G338-G341
JournalElectrochemical and Solid-State Letters
Volume7
Issue number12
DOIs
StatePublished - 2004

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