To maximize the benefit of semiconductor technology, the U.S. military is requiring that the operating temperature for power electronic devices must be able to handle temperatures of up to150°C. Power devices that use the wide band gap material silicon carbide (SiC) are being developed to provide large breakdown voltages and fast recovery times. When circuits call for high blocking voltages and fast reverse recovery times under adverse temperature situations, the p-i-n diode is the device presently used. To simulate the SiC device behavior, a modeling program named Silvaco was used to characterize a 5.76mm2 10kV SiC p-i-n diode manufactured by Cree under forward bias, reverse blocking and reverse recovery conditions. These simulations are then compared with test results from the actual device. Forward bias testing of the diode was conducted on a high power curve tracer and two different test circuits were developed to test reverse blocking and reverse recovery conditions respectively on sample diodes from Cree to add credibility to the Silvaco simulations. The results from the simulation and the experimental test were compared to verify the accuracy of the simulation and improve the prediction of high temperature device behavior in power electronics.
|Number of pages||4|
|Journal||Conference Record of the International Power Modulator Symposium and High Voltage Workshop|
|State||Published - 2004|
|Event||2004 IEEE International Power Modulator Conference: 26th International Power Modulator Symposium and 2004 High Voltage Workshop - San Francisco, CA, United States|
Duration: May 23 2004 → May 26 2004