Silvaco based electro-Thermal analysis of 4H-SiC TIV-JFET structure under extremely high current density resistive switching

Bejoy N. Pushpakaran, Stephen B. Bayne, Aderinto A. Ogunniyi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A 2D model of a 1200 V normally-ON 4H-SİC Trenched and Implanted Vertical Junction Field Effect Transistor (TIV-JFET) cell structure was designed and simulated using Silvaco ATLAS TCAD software to investigate and understand the effects of extremely high current density pulsed switching on the device characteristics. The JFET cell was designed for an active area of 2 μm2 and a threshold voltage of-7 V. Physics-based models were included to account for impact ionization, recombination effects, band gap narrowing, mobility and lattice heating. The electro-Thermal simulation was performed using a resistive switching circuit at an ambient lattice temperature of 300 K. The circuit was designed for an ON-state drain current density of 5000 A/cm2. The device was simulated using a 100 kHz 50% duty cycle gate signal consisting of four switching cycles considering the simulation duration bottleneck. The analysis of lattice temperature profile revealed the formation of thermal hot spot in the channel area close to the gate P+ regions in the JFET structure. Further analysis showed an increase in the minority carrier concentration in the vicinity of the gate implants which affected the switching characteristics of the JFET at extremely high current density.

Original languageEnglish
Title of host publication2016 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages538-541
Number of pages4
ISBN (Electronic)9781509023547
DOIs
StatePublished - Aug 17 2017
Event2016 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2016 - San Francisco, United States
Duration: Jul 5 2016Jul 9 2016

Publication series

Name2016 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2016

Conference

Conference2016 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2016
CountryUnited States
CitySan Francisco
Period07/5/1607/9/16

Keywords

  • Extreme current density
  • JFET
  • Lattice heating
  • Resistive switching
  • Silicon carbide
  • Silvaco TCAD

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    Pushpakaran, B. N., Bayne, S. B., & Ogunniyi, A. A. (2017). Silvaco based electro-Thermal analysis of 4H-SiC TIV-JFET structure under extremely high current density resistive switching. In 2016 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2016 (pp. 538-541). [8012789] (2016 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPMHVC.2016.8012789