@article{221017d4600f47848ee75fca296f2659,
title = "Silicon-dioxide waveguides with low birefringence",
abstract = "We describe the use of highly boron-doped silicon dioxide for the preparation of optical waveguides with very low birefringence. Plasma-enhanced chemical vapor deposition was used to vary the boron content from 5 wt% to 10 wt%, at a constant phosphorus content of 4.8%. A transition from compressive to tensile stress was observed at a boron concentration of 9.1%. Pedestal-type waveguides formed with the high-boron top cladding layer show low loss of 0.02 dB/cm. Arrayed waveguide grating devices with a polarization-dependent wavelength shift of 0.01 nm and excellent stability have been demonstrated.",
keywords = "Glass, Multiplexing, Optical waveguides, Photoelasticity, Polarization",
author = "{Grave de Peralta}, L. and Bernussi, {Ayrton A.} and H. Temkin and Borhani, {Marcus M.} and Doucette, {David E.}",
note = "Funding Information: Manuscript received October 3, 2002; revised February 28, 2003. This work was supported by the Jack F. Maddox Foundation, State of Texas, under the TDT program, and by Texas Instruments. L. G. de Peralta, A. A. Bernussi, and H. Temkin are with the Nano Tech Center, Texas Tech University, Lubbock, TX 79409 USA. M. M. Borhani and D. E. Doucette are with X-Fab Texas, Lubbock, TX 79415 USA. Digital Object Identifier 10.1109/JQE.2003.813194 Fig. 1. Schematic cross-section of waveguide structures described here. (a) Conventional single-mode structure. (b) Low birefringence pedestal structures.",
year = "2003",
month = jul,
doi = "10.1109/JQE.2003.813194",
language = "English",
volume = "39",
pages = "874--879",
journal = "IEEE Journal of Quantum Electronics",
issn = "0018-9197",
number = "7",
}