Silicon carbide power semiconductor module development for a high temperature 10kW AC drive

Dimosthenis Katsis; Bruce Geil; Timothy Griffin; Gail Koebke; Steven Kaplan; Gregory Ovrebo; Stephen Bayne

doi:10.1109/IAS.2005.1518339

Silicon carbide power semiconductor module development for a high temperature 10kW AC drive

Dimosthenis Katsis, Bruce Geil, Timothy Griffin, Gail Koebke, Steven Kaplan, Gregory Ovrebo, Stephen Bayne

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

6 Scopus citations

Abstract

A silicon carbide power module has been developed to demonstrate a high-temperature, 10kW AC drive application. Several goals for this development include temperature dependent parameter evaluation of parallel-connected transistors and junction barrier Schottky diodes at 150°C operating temperature. Next, design of a high-thermal conductivity substrate to cool the modules based on predicted losses. Finally the integration into a variable speed AC drive using a DSP-based V/F motor controller. Test results for the 10 kW AC drive are provided to demonstrate power module performance up to 180°C.

Original language	English
Title of host publication	Conference Record of the 2005 IEEE Industry Applications Conference, 40th IAS Annual Meeting
Pages	399-403
Number of pages	5
DOIs	https://doi.org/10.1109/IAS.2005.1518339
State	Published - 2005
Event	2005 IEEE Industry Applications Conference, 40th IAS Annual Meeting - Kowloon, Hong Kong, China Duration: Oct 2 2005 → Oct 6 2005

Publication series

Name	Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)
Volume	1
ISSN (Print)	0197-2618

Conference

Conference	2005 IEEE Industry Applications Conference, 40th IAS Annual Meeting
Country/Territory	China
City	Kowloon, Hong Kong
Period	10/2/05 → 10/6/05

Keywords

AC Drive
High temperature
Junction barrier schottky diode
Power BJT
Silicon Carbide

Access to Document

10.1109/IAS.2005.1518339

Cite this

Katsis, D., Geil, B., Griffin, T., Koebke, G., Kaplan, S., Ovrebo, G., & Bayne, S. (2005). Silicon carbide power semiconductor module development for a high temperature 10kW AC drive. In Conference Record of the 2005 IEEE Industry Applications Conference, 40th IAS Annual Meeting (pp. 399-403). Article 1518339 (Conference Record - IAS Annual Meeting (IEEE Industry Applications Society); Vol. 1). https://doi.org/10.1109/IAS.2005.1518339

@inproceedings{b3b4860063124cba994c9a4124c9c9fa,

title = "Silicon carbide power semiconductor module development for a high temperature 10kW AC drive",

abstract = "A silicon carbide power module has been developed to demonstrate a high-temperature, 10kW AC drive application. Several goals for this development include temperature dependent parameter evaluation of parallel-connected transistors and junction barrier Schottky diodes at 150°C operating temperature. Next, design of a high-thermal conductivity substrate to cool the modules based on predicted losses. Finally the integration into a variable speed AC drive using a DSP-based V/F motor controller. Test results for the 10 kW AC drive are provided to demonstrate power module performance up to 180°C.",

keywords = "AC Drive, High temperature, Junction barrier schottky diode, Power BJT, Silicon Carbide",

author = "Dimosthenis Katsis and Bruce Geil and Timothy Griffin and Gail Koebke and Steven Kaplan and Gregory Ovrebo and Stephen Bayne",

year = "2005",

doi = "10.1109/IAS.2005.1518339",

language = "English",

isbn = "0780392086",

series = "Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)",

pages = "399--403",

booktitle = "Conference Record of the 2005 IEEE Industry Applications Conference, 40th IAS Annual Meeting",

note = "2005 IEEE Industry Applications Conference, 40th IAS Annual Meeting ; Conference date: 02-10-2005 Through 06-10-2005",

}

Katsis, D, Geil, B, Griffin, T, Koebke, G, Kaplan, S, Ovrebo, G & Bayne, S 2005, Silicon carbide power semiconductor module development for a high temperature 10kW AC drive. in Conference Record of the 2005 IEEE Industry Applications Conference, 40th IAS Annual Meeting., 1518339, Conference Record - IAS Annual Meeting (IEEE Industry Applications Society), vol. 1, pp. 399-403, 2005 IEEE Industry Applications Conference, 40th IAS Annual Meeting, Kowloon, Hong Kong, China, 10/2/05. https://doi.org/10.1109/IAS.2005.1518339

Silicon carbide power semiconductor module development for a high temperature 10kW AC drive. / Katsis, Dimosthenis; Geil, Bruce; Griffin, Timothy et al.
Conference Record of the 2005 IEEE Industry Applications Conference, 40th IAS Annual Meeting. 2005. p. 399-403 1518339 (Conference Record - IAS Annual Meeting (IEEE Industry Applications Society); Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Ovrebo, Gregory

AU - Bayne, Stephen

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N2 - A silicon carbide power module has been developed to demonstrate a high-temperature, 10kW AC drive application. Several goals for this development include temperature dependent parameter evaluation of parallel-connected transistors and junction barrier Schottky diodes at 150°C operating temperature. Next, design of a high-thermal conductivity substrate to cool the modules based on predicted losses. Finally the integration into a variable speed AC drive using a DSP-based V/F motor controller. Test results for the 10 kW AC drive are provided to demonstrate power module performance up to 180°C.

AB - A silicon carbide power module has been developed to demonstrate a high-temperature, 10kW AC drive application. Several goals for this development include temperature dependent parameter evaluation of parallel-connected transistors and junction barrier Schottky diodes at 150°C operating temperature. Next, design of a high-thermal conductivity substrate to cool the modules based on predicted losses. Finally the integration into a variable speed AC drive using a DSP-based V/F motor controller. Test results for the 10 kW AC drive are provided to demonstrate power module performance up to 180°C.

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KW - High temperature

KW - Junction barrier schottky diode

KW - Power BJT

KW - Silicon Carbide

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Katsis D, Geil B, Griffin T, Koebke G, Kaplan S, Ovrebo G et al. Silicon carbide power semiconductor module development for a high temperature 10kW AC drive. In Conference Record of the 2005 IEEE Industry Applications Conference, 40th IAS Annual Meeting. 2005. p. 399-403. 1518339. (Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)). doi: 10.1109/IAS.2005.1518339

Silicon carbide power semiconductor module development for a high temperature 10kW AC drive

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