Silicon carbide power semiconductor module development for a high temperature 10kW AC drive

Dimosthenis Katsis, Bruce Geil, Timothy Griffin, Gail Koebke, Steven Kaplan, Gregory Ovrebo, Stephen Bayne

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

6 Scopus citations

Abstract

A silicon carbide power module has been developed to demonstrate a high-temperature, 10kW AC drive application. Several goals for this development include temperature dependent parameter evaluation of parallel-connected transistors and junction barrier Schottky diodes at 150°C operating temperature. Next, design of a high-thermal conductivity substrate to cool the modules based on predicted losses. Finally the integration into a variable speed AC drive using a DSP-based V/F motor controller. Test results for the 10 kW AC drive are provided to demonstrate power module performance up to 180°C.

Original languageEnglish
Title of host publicationConference Record of the 2005 IEEE Industry Applications Conference, 40th IAS Annual Meeting
Pages399-403
Number of pages5
DOIs
StatePublished - 2005
Event2005 IEEE Industry Applications Conference, 40th IAS Annual Meeting - Kowloon, Hong Kong, China
Duration: Oct 2 2005Oct 6 2005

Publication series

NameConference Record - IAS Annual Meeting (IEEE Industry Applications Society)
Volume1
ISSN (Print)0197-2618

Conference

Conference2005 IEEE Industry Applications Conference, 40th IAS Annual Meeting
CountryChina
CityKowloon, Hong Kong
Period10/2/0510/6/05

Keywords

  • AC Drive
  • High temperature
  • Junction barrier schottky diode
  • Power BJT
  • Silicon Carbide

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