Silicon based power amplifiers for 4G/5G handset applications

Yan Li, Jerry Lopez, Donald Y.C. Lie

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The LTE-Advanced and its related market factors present many challenges for the RF power amplifier (PA) and front end designs. This paper reviews some of the emerging techniques such as dynamic supply voltage modulation, reconfigurable PA, FET stacking and power combining to solve these challenges for silicon based PAs. These techniques with advanced CMOS and SiGe technologies can benefit the future wireless handset systems, where higher integration is required.

Original languageEnglish
Title of host publication2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings
EditorsRu Huang, Ting-Ao Tang, Yu-Long Jiang
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages112-115
Number of pages4
ISBN (Electronic)9781467397179
DOIs
StatePublished - Jul 31 2017
Event13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Hangzhou, China
Duration: Oct 25 2016Oct 28 2016

Publication series

Name2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings

Conference

Conference13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016
Country/TerritoryChina
CityHangzhou
Period10/25/1610/28/16

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