@inproceedings{383a6ffb8ae84da78a57cfce6f656d3a,
title = "SiC GTOs Thyristor for Long Term Reliability on Pulsed Power Application Test",
abstract = "Silicon Carbide (SiC) is a wide-bandgap semiconductor with a wider bandgap, higher critical electric field, higher saturation velocity, and higher thermal conductivity than silicon, making it desirable for pulsed power applications. The n-type Gate Turn-off thyristor (nGTO) is a controllable solid-state switch with high blocking voltage and high current conduction capabilities. However, its device structure is challenging to develop using SiC. Wolfspeed has developed a 15.0 kV SiC nGTO that withstood peak current up to 1.0 kA. A testbed was developed to evaluate the long-term reliability of these SiC nGTOs. The pulser operates with a capacitor bank charged to 10.0 kV to deliver a 35.0 μs ring-down current waveform through the device. The SiC nGTOs were pulsed with a repetition rate of 0.5 Hz. It was observed that the device dissipated 700.0 J peak energy during pulsing. COMSOL Multiphysics simulated the SiC nGTO during a single pulsing event. The simulation models the thermal flow and current density in the nGTO. The thermal result shows the peak device temperature rising to 360.1 K after 17 μs into the pulsing event.",
keywords = "Power Conditioning, Pulsed Power, Reliability Test, SiC, Thermal Modeling, nGTO",
author = "Tsz Tsoi and Chase Whitworth and Matthew Kim and Stephen Bayne and Heather O'Brien and Aderinto Ogunniyi",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 IEEE Pulsed Power Conference, PPC 2021 ; Conference date: 12-12-2021 Through 16-12-2021",
year = "2021",
doi = "10.1109/PPC40517.2021.9733125",
language = "English",
series = "IEEE International Pulsed Power Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2021 IEEE Pulsed Power Conference, PPC 2021",
}