Si-doped high Al-content AlGaN epilayers with improved quality and conductivity using indium as a surfactant

T. M. Al Tahtamouni, A. Sedhain, Jingyu Lin, Hongxing Jiang

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)092105
JournalAppl. Phys. Lett.
StatePublished - Mar 4 2008

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