Si-doped Al xGa 1-xN (0.56≤×≤1) layers grown by molecular beam epitaxy with ammonia

B. Borisov, V. Kuryatkov, Yu Kudryavtsev, R. Asomoza, S. Nikishin, D. Y. Song, M. Holtz, H. Temkin

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Abstract

We describe experiments on Si doping in Alx Ga1-x N grown by gas source molecular beam epitaxy with ammonia and silane. Growth conditions that minimize self-compensation were used to assure Si incorporation at a level of 2× 1020 cm-3 for the entire range of compositions investigated, from x=0.56 to 1.0. These conditions resulted in donor concentrations of ∼1× 1019 cm-3 up to x=0.85. Layers of Alx Ga1-x N up to x=0.85 show good mobility and low resistivity. In these layers, the activation energy, Ea, of Si stays below ∼25 meV and Si can be considered a shallow donor. For AlN content above x=0.85 the donor activation energy increases to Ea ∼250 meV in AlN. The change in donor activation energy correlates with increased incorporation of oxygen and carbon.

Original languageEnglish
Article number132106
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number13
DOIs
StatePublished - Sep 26 2005

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    Borisov, B., Kuryatkov, V., Kudryavtsev, Y., Asomoza, R., Nikishin, S., Song, D. Y., Holtz, M., & Temkin, H. (2005). Si-doped Al xGa 1-xN (0.56≤×≤1) layers grown by molecular beam epitaxy with ammonia. Applied Physics Letters, 87(13), 1-3. [132106]. https://doi.org/10.1063/1.2061856