Short-period superlattices of AIN/Al 0.08Ga 0.92N grown on AIN substrates

S. A. Nikishin, B. A. Borisov, A. Chandolu, V. V. Kuryatkov, H. Temkin, M. Holtz, E. N. Mokhov, Yu Makarov, H. Helava

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Abstract

High-quality short-period superlattices of AlN/Al 0.08Ga 0.92N have been grown by gas-source molecular-beam epitaxy with ammonia on Al face of AlN (0001) substrates. A significant reduction was achieved in the dislocation density, down to 3 × 10 8 cm -2. Complete removal of residual Al 2O 3 surface oxide is needed in order to obtain low dislocation density in homoepitaxy on AlN. We show that the presence of Al 2O 3 islands with the surface coverage as low as 0.2% results in increased dislocation density.

Original languageEnglish
Pages (from-to)4355-4357
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number19
DOIs
StatePublished - Nov 8 2004

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