Short-period superlattices of AIN/Al 0.08Ga 0.92N grown on AIN substrates

S. A. Nikishin; B. A. Borisov; A. Chandolu; V. V. Kuryatkov; H. Temkin; M. Holtz; E. N. Mokhov; Yu Makarov; H. Helava

doi:10.1063/1.1815056

Short-period superlattices of AIN/Al _0.08Ga _0.92N grown on AIN substrates

S. A. Nikishin, B. A. Borisov, A. Chandolu, V. V. Kuryatkov, H. Temkin, M. Holtz, E. N. Mokhov, Yu Makarov, H. Helava

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

High-quality short-period superlattices of AlN/Al _0.08Ga _0.92N have been grown by gas-source molecular-beam epitaxy with ammonia on Al face of AlN (0001) substrates. A significant reduction was achieved in the dislocation density, down to 3 × 10 ⁸ cm ^-2. Complete removal of residual Al ₂O ₃ surface oxide is needed in order to obtain low dislocation density in homoepitaxy on AlN. We show that the presence of Al ₂O ₃ islands with the surface coverage as low as 0.2% results in increased dislocation density.

Original language	English
Pages (from-to)	4355-4357
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	19
DOIs	https://doi.org/10.1063/1.1815056
State	Published - Nov 8 2004

Access to Document

10.1063/1.1815056

Cite this

@article{ac6d95ab4fe6484bbbe404a8149f9214,

title = "Short-period superlattices of AIN/Al 0.08Ga 0.92N grown on AIN substrates",

abstract = "High-quality short-period superlattices of AlN/Al 0.08Ga 0.92N have been grown by gas-source molecular-beam epitaxy with ammonia on Al face of AlN (0001) substrates. A significant reduction was achieved in the dislocation density, down to 3 × 10 8 cm -2. Complete removal of residual Al 2O 3 surface oxide is needed in order to obtain low dislocation density in homoepitaxy on AlN. We show that the presence of Al 2O 3 islands with the surface coverage as low as 0.2% results in increased dislocation density.",

author = "Nikishin, {S. A.} and Borisov, {B. A.} and A. Chandolu and Kuryatkov, {V. V.} and H. Temkin and M. Holtz and Mokhov, {E. N.} and Yu Makarov and H. Helava",

note = "Funding Information: Work at Texas Tech University is supported by DARPA–SUVOS (Dr. J. Carrano), NSF (ECS-0304224, and 0323640), NATO SfP 974505, SBCCOM, and the J. F Maddox Foundation. The authors would like to acknowledge V. Gorbunov for assistance with the surface preparation of AlN substrates.",

year = "2004",

month = nov,

day = "8",

doi = "10.1063/1.1815056",

language = "English",

volume = "85",

pages = "4355--4357",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "19",

}

TY - JOUR

T1 - Short-period superlattices of AIN/Al 0.08Ga 0.92N grown on AIN substrates

AU - Nikishin, S. A.

AU - Borisov, B. A.

AU - Chandolu, A.

AU - Kuryatkov, V. V.

AU - Temkin, H.

AU - Holtz, M.

AU - Mokhov, E. N.

AU - Makarov, Yu

AU - Helava, H.

N1 - Funding Information: Work at Texas Tech University is supported by DARPA–SUVOS (Dr. J. Carrano), NSF (ECS-0304224, and 0323640), NATO SfP 974505, SBCCOM, and the J. F Maddox Foundation. The authors would like to acknowledge V. Gorbunov for assistance with the surface preparation of AlN substrates.

PY - 2004/11/8

Y1 - 2004/11/8

N2 - High-quality short-period superlattices of AlN/Al 0.08Ga 0.92N have been grown by gas-source molecular-beam epitaxy with ammonia on Al face of AlN (0001) substrates. A significant reduction was achieved in the dislocation density, down to 3 × 10 8 cm -2. Complete removal of residual Al 2O 3 surface oxide is needed in order to obtain low dislocation density in homoepitaxy on AlN. We show that the presence of Al 2O 3 islands with the surface coverage as low as 0.2% results in increased dislocation density.

AB - High-quality short-period superlattices of AlN/Al 0.08Ga 0.92N have been grown by gas-source molecular-beam epitaxy with ammonia on Al face of AlN (0001) substrates. A significant reduction was achieved in the dislocation density, down to 3 × 10 8 cm -2. Complete removal of residual Al 2O 3 surface oxide is needed in order to obtain low dislocation density in homoepitaxy on AlN. We show that the presence of Al 2O 3 islands with the surface coverage as low as 0.2% results in increased dislocation density.

UR - http://www.scopus.com/inward/record.url?scp=10844264148&partnerID=8YFLogxK

U2 - 10.1063/1.1815056

DO - 10.1063/1.1815056

M3 - Article

AN - SCOPUS:10844264148

SN - 0003-6951

VL - 85

SP - 4355

EP - 4357

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

Short-period superlattices of AIN/Al _0.08Ga _0.92N grown on AIN substrates

Abstract

Access to Document

Other files and links

Fingerprint

Cite this