Short period p-type AlN/AlGaN superlattices for deep UV light emitters

Sergey Nikishin; Boris Borisov; Vladimir Mansurov; Mahesh Pandikunta; Indra Chari; G Rajanna; Ayrton Bernussi; Yuri Kudryavtsev; Rene Asomoza; K A. Bulashevich; Sergey Yu Karpov; S Sohal; Mark Holtz

Short period p-type AlN/AlGaN superlattices for deep UV light emitters

Sergey Nikishin, Boris Borisov, Vladimir Mansurov, Mahesh Pandikunta, Indra Chari, G Rajanna, Ayrton Bernussi, Yuri Kudryavtsev, Rene Asomoza, K A. Bulashevich, Sergey Yu Karpov, S Sohal, Mark Holtz

Electrical and Computer Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

The Mg doped AlN/AlxGa1-xN (0.03 ≤ x ≤ 0.05) short period superlattices (SPSLs) were grown by gas source molecular beam epitaxy on (0001) sapphire substrates. The average AlN mole fraction is ~ 0.7 and the hole concentration is ~ 7×1017 cm-3. Contacts formed to the SPSLs using Ni/Au bilayer are found to have specific contact resistance ~ 5×10-5 Ωcm2 near room temperature and to show weak temperature dependence attributed to activation of Mg acceptors in the AlN barriers of SPSLs. These p-SPSLs are attractive for fabrication of transparent low resistive ohmic contacts for deep UV LEDs.

Original language	English
State	Published - 2010

Cite this

@conference{9235a87619024a1497c4c48c28a3d0f0,

title = "Short period p-type AlN/AlGaN superlattices for deep UV light emitters",

abstract = "The Mg doped AlN/AlxGa1-xN (0.03 ≤ x ≤ 0.05) short period superlattices (SPSLs) were grown by gas source molecular beam epitaxy on (0001) sapphire substrates. The average AlN mole fraction is ~ 0.7 and the hole concentration is ~ 7×1017 cm-3. Contacts formed to the SPSLs using Ni/Au bilayer are found to have specific contact resistance ~ 5×10-5 Ωcm2 near room temperature and to show weak temperature dependence attributed to activation of Mg acceptors in the AlN barriers of SPSLs. These p-SPSLs are attractive for fabrication of transparent low resistive ohmic contacts for deep UV LEDs.",

author = "Sergey Nikishin and Boris Borisov and Vladimir Mansurov and Mahesh Pandikunta and Indra Chari and G Rajanna and Ayrton Bernussi and Yuri Kudryavtsev and Rene Asomoza and Bulashevich, {K A.} and Karpov, {Sergey Yu} and S Sohal and Mark Holtz",

year = "2010",

language = "English",

}

TY - CONF

T1 - Short period p-type AlN/AlGaN superlattices for deep UV light emitters

AU - Nikishin, Sergey

AU - Borisov, Boris

AU - Mansurov, Vladimir

AU - Pandikunta, Mahesh

AU - Chari, Indra

AU - Rajanna, G

AU - Bernussi, Ayrton

AU - Kudryavtsev, Yuri

AU - Asomoza, Rene

AU - Bulashevich, K A.

AU - Karpov, Sergey Yu

AU - Sohal, S

AU - Holtz, Mark

PY - 2010

Y1 - 2010

N2 - The Mg doped AlN/AlxGa1-xN (0.03 ≤ x ≤ 0.05) short period superlattices (SPSLs) were grown by gas source molecular beam epitaxy on (0001) sapphire substrates. The average AlN mole fraction is ~ 0.7 and the hole concentration is ~ 7×1017 cm-3. Contacts formed to the SPSLs using Ni/Au bilayer are found to have specific contact resistance ~ 5×10-5 Ωcm2 near room temperature and to show weak temperature dependence attributed to activation of Mg acceptors in the AlN barriers of SPSLs. These p-SPSLs are attractive for fabrication of transparent low resistive ohmic contacts for deep UV LEDs.

AB - The Mg doped AlN/AlxGa1-xN (0.03 ≤ x ≤ 0.05) short period superlattices (SPSLs) were grown by gas source molecular beam epitaxy on (0001) sapphire substrates. The average AlN mole fraction is ~ 0.7 and the hole concentration is ~ 7×1017 cm-3. Contacts formed to the SPSLs using Ni/Au bilayer are found to have specific contact resistance ~ 5×10-5 Ωcm2 near room temperature and to show weak temperature dependence attributed to activation of Mg acceptors in the AlN barriers of SPSLs. These p-SPSLs are attractive for fabrication of transparent low resistive ohmic contacts for deep UV LEDs.

M3 - Paper

ER -

Short period p-type AlN/AlGaN superlattices for deep UV light emitters

Abstract

Fingerprint

Cite this