Short period p-type AlN/AlGaN superlattices for deep UV light emitters

Sergey Nikishin, Boris Borisov, Vladimir Mansurov, Mahesh Pandikunta, Indra Chari, G Rajanna, Ayrton Bernussi, Yuri Kudryavtsev, Rene Asomoza, K A. Bulashevich, Sergey Yu Karpov, S Sohal, Mark Holtz

Research output: Contribution to conferencePaper

Abstract

The Mg doped AlN/AlxGa1-xN (0.03 ≤ x ≤ 0.05) short period superlattices (SPSLs) were grown by gas source molecular beam epitaxy on (0001) sapphire substrates. The average AlN mole fraction is ~ 0.7 and the hole concentration is ~ 7×1017 cm-3. Contacts formed to the SPSLs using Ni/Au bilayer are found to have specific contact resistance ~ 5×10-5 Ωcm2 near room temperature and to show weak temperature dependence attributed to activation of Mg acceptors in the AlN barriers of SPSLs. These p-SPSLs are attractive for fabrication of transparent low resistive ohmic contacts for deep UV LEDs.
Original languageEnglish
StatePublished - 2010

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    Nikishin, S., Borisov, B., Mansurov, V., Pandikunta, M., Chari, I., Rajanna, G., Bernussi, A., Kudryavtsev, Y., Asomoza, R., Bulashevich, K. A., Karpov, S. Y., Sohal, S., & Holtz, M. (2010). Short period p-type AlN/AlGaN superlattices for deep UV light emitters.