Short period p-type AlN/AlGaN superlattices for deep UV light emitters

S. Nikishin; B. Borisov; V. Mansurov; M. Pandikunta; I. Chary; G. Rajanna; A. Bernussi; Yu Kudryavtsev; R. Asomoza; K. A. Bulashevich; S. Yu Karpov; S. Sohal; M. Holtz

Short period p-type AlN/AlGaN superlattices for deep UV light emitters

S. Nikishin, B. Borisov, V. Mansurov, M. Pandikunta, I. Chary, G. Rajanna, A. Bernussi, Yu Kudryavtsev, R. Asomoza, K. A. Bulashevich, S. Yu Karpov, S. Sohal, M. Holtz

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

The Mg doped AlN/Al_xGa_1-xN (0.03 ≤ x ≤ 0.05) short period superlattices (SPSLs) were grown by gas source molecular beam epitaxy on (0001) sapphire substrates. The average AlN mole fraction is ∼ 0.7 and the hole concentration is ∼ 7×10¹⁷ cm^-3. Contacts formed to the SPSLs using Ni/Au bilayer are found to have specific contact resistance ∼ 5×10^-5 Ωcm² near room temperature and to show weak temperature dependence attributed to activation of Mg acceptors in the AlN barriers of SPSLs. These p-SPSLs are attractive for fabrication of transparent low resistive ohmic contacts for deep UV LEDs.

Original language	English
Title of host publication	III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions
Pages	183-188
Number of pages	6
State	Published - 2010
Event	2009 MRS Fall Meeting - Boston, MA, United States Duration: Nov 30 2009 → Dec 4 2009

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1202
ISSN (Print)	0272-9172

Conference

Conference	2009 MRS Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	11/30/09 → 12/4/09

Cite this

Nikishin, S., Borisov, B., Mansurov, V., Pandikunta, M., Chary, I., Rajanna, G., Bernussi, A., Kudryavtsev, Y., Asomoza, R., Bulashevich, K. A., Karpov, S. Y., Sohal, S., & Holtz, M. (2010). Short period p-type AlN/AlGaN superlattices for deep UV light emitters. In III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions (pp. 183-188). (Materials Research Society Symposium Proceedings; Vol. 1202).

@inproceedings{bff3e05e9d184299808089f7e01de7e1,

title = "Short period p-type AlN/AlGaN superlattices for deep UV light emitters",

abstract = "The Mg doped AlN/AlxGa1-xN (0.03 ≤ x ≤ 0.05) short period superlattices (SPSLs) were grown by gas source molecular beam epitaxy on (0001) sapphire substrates. The average AlN mole fraction is ∼ 0.7 and the hole concentration is ∼ 7×1017 cm-3. Contacts formed to the SPSLs using Ni/Au bilayer are found to have specific contact resistance ∼ 5×10-5 Ωcm2 near room temperature and to show weak temperature dependence attributed to activation of Mg acceptors in the AlN barriers of SPSLs. These p-SPSLs are attractive for fabrication of transparent low resistive ohmic contacts for deep UV LEDs.",

author = "S. Nikishin and B. Borisov and V. Mansurov and M. Pandikunta and I. Chary and G. Rajanna and A. Bernussi and Yu Kudryavtsev and R. Asomoza and Bulashevich, {K. A.} and Karpov, {S. Yu} and S. Sohal and M. Holtz",

year = "2010",

language = "English",

isbn = "9781605111759",

series = "Materials Research Society Symposium Proceedings",

pages = "183--188",

booktitle = "III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions",

note = "null ; Conference date: 30-11-2009 Through 04-12-2009",

}

Nikishin, S, Borisov, B, Mansurov, V, Pandikunta, M, Chary, I, Rajanna, G, Bernussi, A, Kudryavtsev, Y, Asomoza, R, Bulashevich, KA, Karpov, SY, Sohal, S & Holtz, M 2010, Short period p-type AlN/AlGaN superlattices for deep UV light emitters. in III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions. Materials Research Society Symposium Proceedings, vol. 1202, pp. 183-188, 2009 MRS Fall Meeting, Boston, MA, United States, 11/30/09.

Short period p-type AlN/AlGaN superlattices for deep UV light emitters. / Nikishin, S.; Borisov, B.; Mansurov, V. et al.

III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions. 2010. p. 183-188 (Materials Research Society Symposium Proceedings; Vol. 1202).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Short period p-type AlN/AlGaN superlattices for deep UV light emitters

AU - Nikishin, S.

AU - Borisov, B.

AU - Mansurov, V.

AU - Pandikunta, M.

AU - Chary, I.

AU - Rajanna, G.

AU - Bernussi, A.

AU - Kudryavtsev, Yu

AU - Asomoza, R.

AU - Bulashevich, K. A.

AU - Karpov, S. Yu

AU - Sohal, S.

AU - Holtz, M.

PY - 2010

Y1 - 2010

N2 - The Mg doped AlN/AlxGa1-xN (0.03 ≤ x ≤ 0.05) short period superlattices (SPSLs) were grown by gas source molecular beam epitaxy on (0001) sapphire substrates. The average AlN mole fraction is ∼ 0.7 and the hole concentration is ∼ 7×1017 cm-3. Contacts formed to the SPSLs using Ni/Au bilayer are found to have specific contact resistance ∼ 5×10-5 Ωcm2 near room temperature and to show weak temperature dependence attributed to activation of Mg acceptors in the AlN barriers of SPSLs. These p-SPSLs are attractive for fabrication of transparent low resistive ohmic contacts for deep UV LEDs.

AB - The Mg doped AlN/AlxGa1-xN (0.03 ≤ x ≤ 0.05) short period superlattices (SPSLs) were grown by gas source molecular beam epitaxy on (0001) sapphire substrates. The average AlN mole fraction is ∼ 0.7 and the hole concentration is ∼ 7×1017 cm-3. Contacts formed to the SPSLs using Ni/Au bilayer are found to have specific contact resistance ∼ 5×10-5 Ωcm2 near room temperature and to show weak temperature dependence attributed to activation of Mg acceptors in the AlN barriers of SPSLs. These p-SPSLs are attractive for fabrication of transparent low resistive ohmic contacts for deep UV LEDs.

UR - http://www.scopus.com/inward/record.url?scp=77954201740&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:77954201740

SN - 9781605111759

T3 - Materials Research Society Symposium Proceedings

SP - 183

EP - 188

BT - III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions

Y2 - 30 November 2009 through 4 December 2009

ER -

Short period p-type AlN/AlGaN superlattices for deep UV light emitters

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