Short period p-type AlN/AlGaN superlattices for deep UV light emitters

S. Nikishin, B. Borisov, V. Mansurov, M. Pandikunta, I. Chary, G. Rajanna, A. Bernussi, Yu Kudryavtsev, R. Asomoza, K. A. Bulashevich, S. Yu Karpov, S. Sohal, M. Holtz

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations


The Mg doped AlN/AlxGa1-xN (0.03 ≤ x ≤ 0.05) short period superlattices (SPSLs) were grown by gas source molecular beam epitaxy on (0001) sapphire substrates. The average AlN mole fraction is ∼ 0.7 and the hole concentration is ∼ 7×1017 cm-3. Contacts formed to the SPSLs using Ni/Au bilayer are found to have specific contact resistance ∼ 5×10-5 Ωcm2 near room temperature and to show weak temperature dependence attributed to activation of Mg acceptors in the AlN barriers of SPSLs. These p-SPSLs are attractive for fabrication of transparent low resistive ohmic contacts for deep UV LEDs.

Original languageEnglish
Title of host publicationIII-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions
Number of pages6
StatePublished - 2010
Event2009 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 30 2009Dec 4 2009

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Conference2009 MRS Fall Meeting
Country/TerritoryUnited States
CityBoston, MA


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