Short-period AlGaN based superlattices for deep UV light emitting diodes grown by gas source molecular beam epitaxy

S. A. Nikishin, B. A. Borisov, V. V. Kuryatkov, M. Holtz, H. Temkin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report the results of two studies of the growth and physical properties of AlGaN-based short-period superlattices (SPSLs), each aimed at improving light emission. In the first experiment, we grow structures on bulk AlN substrates. We observe ∼ 3 times higher luminescence efficiency than identically grown structures on sapphire. In the second experiment, we grow structures on sapphire while controlling the growth mode. We observe a significant improvement in the room temperature cathodoluminescence efficiency (at least by factor of 10) of AlGaN quantum wells when the 3D growth mode is induced by reduced flux of ammonia over identically prepared structures grown in the 2D mode.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
Pages13-18
Number of pages6
StatePublished - 2006
Event2005 Materials Research Society Fall Meeting - Boston, MA, United States
Duration: Nov 28 2005Dec 2 2005

Publication series

NameMaterials Research Society Symposium Proceedings
Volume892
ISSN (Print)0272-9172

Conference

Conference2005 Materials Research Society Fall Meeting
CountryUnited States
CityBoston, MA
Period11/28/0512/2/05

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    Nikishin, S. A., Borisov, B. A., Kuryatkov, V. V., Holtz, M., & Temkin, H. (2006). Short-period AlGaN based superlattices for deep UV light emitting diodes grown by gas source molecular beam epitaxy. In Materials Research Society Symposium Proceedings (pp. 13-18). (Materials Research Society Symposium Proceedings; Vol. 892).