Semiconductor-to-metal transition of Bi2Se3 under high pressure

Junkai Zhang, Yonghao Han, Cailong Liu, Xin Zhang, Feng Ke, Gang Peng, Yanmei Ma, Yanzhang Ma, Chunxiao Gao

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Abstract

Pressure-induced electrical transport properties of Bi2Se 3, including Hall coefficient, carrier concentration, mobility, and electrical resistivity, have been investigated under pressure up to 29.8 GPa by in situ Hall-effect measurements. The results indicate that the structural and electronic phase transitions of Bi2Se3 induce discontinuous changes in these electrical parameters. The significant anomaly in Hall coefficient at 5 GPa reveals an electronic topological transition deriving from the topological change of the band extremum (Van Hove singularity). Additionally, electrical resistivity measurements under variable temperatures show that the insulating state of Bi2Se3 becomes increasingly stable with an increase of pressure below 9.7 GPa. But above 9.7 GPa, Bi2Se3 enters into a fully metallic state. As the metallization occurs, the topological property of Bi2Se3 disappears.

Original languageEnglish
Article number062102
JournalApplied Physics Letters
Volume105
Issue number6
DOIs
StatePublished - Aug 11 2014

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