TY - JOUR
T1 - Semiconductor-to-metal transition of Bi2Se3 under high pressure
AU - Zhang, Junkai
AU - Han, Yonghao
AU - Liu, Cailong
AU - Zhang, Xin
AU - Ke, Feng
AU - Peng, Gang
AU - Ma, Yanmei
AU - Ma, Yanzhang
AU - Gao, Chunxiao
N1 - Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.
PY - 2014/8/11
Y1 - 2014/8/11
N2 - Pressure-induced electrical transport properties of Bi2Se 3, including Hall coefficient, carrier concentration, mobility, and electrical resistivity, have been investigated under pressure up to 29.8 GPa by in situ Hall-effect measurements. The results indicate that the structural and electronic phase transitions of Bi2Se3 induce discontinuous changes in these electrical parameters. The significant anomaly in Hall coefficient at 5 GPa reveals an electronic topological transition deriving from the topological change of the band extremum (Van Hove singularity). Additionally, electrical resistivity measurements under variable temperatures show that the insulating state of Bi2Se3 becomes increasingly stable with an increase of pressure below 9.7 GPa. But above 9.7 GPa, Bi2Se3 enters into a fully metallic state. As the metallization occurs, the topological property of Bi2Se3 disappears.
AB - Pressure-induced electrical transport properties of Bi2Se 3, including Hall coefficient, carrier concentration, mobility, and electrical resistivity, have been investigated under pressure up to 29.8 GPa by in situ Hall-effect measurements. The results indicate that the structural and electronic phase transitions of Bi2Se3 induce discontinuous changes in these electrical parameters. The significant anomaly in Hall coefficient at 5 GPa reveals an electronic topological transition deriving from the topological change of the band extremum (Van Hove singularity). Additionally, electrical resistivity measurements under variable temperatures show that the insulating state of Bi2Se3 becomes increasingly stable with an increase of pressure below 9.7 GPa. But above 9.7 GPa, Bi2Se3 enters into a fully metallic state. As the metallization occurs, the topological property of Bi2Se3 disappears.
UR - http://www.scopus.com/inward/record.url?scp=84905964045&partnerID=8YFLogxK
U2 - 10.1063/1.4892661
DO - 10.1063/1.4892661
M3 - Article
AN - SCOPUS:84905964045
VL - 105
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 6
M1 - 062102
ER -