Semiconducting hexagonal boron nitride for deep ultraviolet photonics

S. Majety, X. K. Cao, R. Dahal, B. N. Pantha, J. Li, J. Y. Lin, H. X. Jiang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

Hexagonal boron nitride (hBN) has been recognized as an important material for various device applications and as a template for graphene electronics. Low-dimensional hBN is expected to possess rich physical properties, similar to graphene. The synthesis of wafer-scale semiconducting hBN epitaxial layers with high crystalline quality and electrical conductivity control is highly desirable. We report the successful synthesis of large area hBN epitaxial layers (up to 2-inch in diameter) by metal organic chemical vapor deposition. Ptype conductivity control was also attained by in-situ Mg doping. Compared to Mg doped wurtzite AlN, which possesses a comparable energy band gap (∼6 eV), dramatic reductions in Mg acceptor energy level and p-type resistivity have been realized in hBN epilayers. Our results indicate that (a) hBN epitaxial layers exhibit outstanding semiconducting properties and (b) hBN is the material of choice for DUV optoelectronic devices. The ability of conductivity control and wafer-scale production of hBN opens up tremendous opportunities for emerging applications, ranging from revolutionizing p-layer approach in III-nitride deep ultraviolet optoelectronics to graphene electronics.

Original languageEnglish
Title of host publicationQuantum Sensing and Nanophotonic Devices IX
DOIs
StatePublished - 2012
EventQuantum Sensing and Nanophotonic Devices IX - San Francisco, CA, United States
Duration: Jan 22 2012Jan 26 2012

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8268
ISSN (Print)0277-786X

Conference

ConferenceQuantum Sensing and Nanophotonic Devices IX
CountryUnited States
CitySan Francisco, CA
Period01/22/1201/26/12

Keywords

  • Hexagonal boron nitride
  • deep UV photonics
  • graphene electronics
  • p-type conductivity control
  • wide bandgap semiconductors

Fingerprint Dive into the research topics of 'Semiconducting hexagonal boron nitride for deep ultraviolet photonics'. Together they form a unique fingerprint.

  • Cite this

    Majety, S., Cao, X. K., Dahal, R., Pantha, B. N., Li, J., Lin, J. Y., & Jiang, H. X. (2012). Semiconducting hexagonal boron nitride for deep ultraviolet photonics. In Quantum Sensing and Nanophotonic Devices IX [82682R] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8268). https://doi.org/10.1117/12.914084