TY - GEN
T1 - Selective area epitaxy of InGaN/GaN stripes, hexagonal rings, and triangular rings for achieving green emission
AU - Feng, Wen
AU - Kuryatkov, Vladimir V.
AU - Rosenbladt, Dana M.
AU - Stojanovic, Nenad
AU - Pandikunta, Mahesh
AU - Nikishin, Sergey A.
AU - Holtz, Mark
PY - 2010
Y1 - 2010
N2 - We report selective area epitaxy of InGaN/GaN micron-scale stripes and rings on patterned (0001) A1N/sapphire. The objective is to elevate indium incorporation for achieving blue and green emission on semi-polar crystal facets. In each case, GaN structures were first produced, and the InGaN quantum wells (QWs) were subsequently grown. The pyramidal InGaN/GaN stripe along the 〈11-20〉 direction has uniform CL emission at 500 nm on the smooth {1-101} sidewall and at 550 nm on the narrow ridge. In InGaN/GaN triangular rings, the structures reveal smooth inner and outer sidewall facets falling into a single type of {1-101} planes. All these {1-101} sidewall facets demonstrate similar CL spectra which appear to be the superposition of two peaks at positions 500 nm and 460 nm. Spatially matched striations are observed in the CL intensity images and surface morphologies of the {1-101} sidewall facets. InGaN/GaN hexagonal rings are comprised of {11-22} and {21-33} facets on inner sidewalls, and {1-101} facets on outer sidewalls. Distinct CL spectra with peak wavelengths as long as 500 nm are observed for these diverse sidewall facets of the hexagonal rings.
AB - We report selective area epitaxy of InGaN/GaN micron-scale stripes and rings on patterned (0001) A1N/sapphire. The objective is to elevate indium incorporation for achieving blue and green emission on semi-polar crystal facets. In each case, GaN structures were first produced, and the InGaN quantum wells (QWs) were subsequently grown. The pyramidal InGaN/GaN stripe along the 〈11-20〉 direction has uniform CL emission at 500 nm on the smooth {1-101} sidewall and at 550 nm on the narrow ridge. In InGaN/GaN triangular rings, the structures reveal smooth inner and outer sidewall facets falling into a single type of {1-101} planes. All these {1-101} sidewall facets demonstrate similar CL spectra which appear to be the superposition of two peaks at positions 500 nm and 460 nm. Spatially matched striations are observed in the CL intensity images and surface morphologies of the {1-101} sidewall facets. InGaN/GaN hexagonal rings are comprised of {11-22} and {21-33} facets on inner sidewalls, and {1-101} facets on outer sidewalls. Distinct CL spectra with peak wavelengths as long as 500 nm are observed for these diverse sidewall facets of the hexagonal rings.
UR - http://www.scopus.com/inward/record.url?scp=77954192423&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:77954192423
SN - 9781605111759
T3 - Materials Research Society Symposium Proceedings
SP - 263
EP - 268
BT - III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions
T2 - 2009 MRS Fall Meeting
Y2 - 30 November 2009 through 4 December 2009
ER -