Selective area epitaxy of InGaN/GaN stripes, hexagonal rings, and triangular rings for achieving green emission

Wen Feng, Vladimir V. Kuryatkov, Dana M. Rosenbladt, Nenad Stojanovic, Mahesh Pandikunta, Sergey A. Nikishin, Mark Holtz

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


We report selective area epitaxy of InGaN/GaN micron-scale stripes and rings on patterned (0001) A1N/sapphire. The objective is to elevate indium incorporation for achieving blue and green emission on semi-polar crystal facets. In each case, GaN structures were first produced, and the InGaN quantum wells (QWs) were subsequently grown. The pyramidal InGaN/GaN stripe along the 〈11-20〉 direction has uniform CL emission at 500 nm on the smooth {1-101} sidewall and at 550 nm on the narrow ridge. In InGaN/GaN triangular rings, the structures reveal smooth inner and outer sidewall facets falling into a single type of {1-101} planes. All these {1-101} sidewall facets demonstrate similar CL spectra which appear to be the superposition of two peaks at positions 500 nm and 460 nm. Spatially matched striations are observed in the CL intensity images and surface morphologies of the {1-101} sidewall facets. InGaN/GaN hexagonal rings are comprised of {11-22} and {21-33} facets on inner sidewalls, and {1-101} facets on outer sidewalls. Distinct CL spectra with peak wavelengths as long as 500 nm are observed for these diverse sidewall facets of the hexagonal rings.

Original languageEnglish
Title of host publicationIII-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions
Number of pages6
StatePublished - 2010
Event2009 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 30 2009Dec 4 2009

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Conference2009 MRS Fall Meeting
Country/TerritoryUnited States
CityBoston, MA


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