Selective area epitaxy of InGaN quantum well triangular microrings with a single type of sidewall facets

Wen Feng, Vladimir Kuryatkov, Sergey Nikishin, Mark Holtz

Research output: Contribution to journalArticle

Abstract

Triangular microrings have been formed by selective area epitaxy of GaN and InGaN quantum wells (QWs) on patterned (0001) AlN/sapphire. SiO2 patterns consist of triangular ring openings oriented with edges parallel to two different orientations. InGaN QW microrings with each edge parallel to the direction suffer very rough sidewalls while microrings with each edge parallel to the direction exhibit well formed and smooth sidewalls as a result of the generation of a single type of facets on the inner and outer sidewalls. These facets demonstrate similar cathodoluminescence (CL) spectra that appear to be the superposition of two peaks at positions ~ 2.5 eV (500 nm) and 2.7 eV (460 nm). Moreover, spatially matched striations are observed in the CL intensity images and surface morphologies of the sidewall facets. The observed striations are found to be related to subtle surface morphologies of the underlying GaN structures.
Original languageEnglish
Pages (from-to)1717
JournalJournal of Crystal Growth
StatePublished - 2010

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