TY - JOUR
T1 - Selective area epitaxy of InGaN quantum well triangular microrings with a single type of sidewall facets
AU - Feng, Wen
AU - Kuryatkov, Vladimir V.
AU - Nikishin, Sergey A.
AU - Holtz, Mark
PY - 2010/5/1
Y1 - 2010/5/1
N2 - Triangular microrings have been formed by selective area epitaxy of GaN and InGaN quantum wells (QWs) on patterned (0 0 0 1) AlN/sapphire. SiO2 patterns consist of triangular ring openings oriented with edges parallel to two different orientations. InGaN QW microrings with each edge parallel to the 〈1 1̄ 0 0〉 direction have very rough sidewalls while microrings with each edge parallel to the 〈1 1 2- 0〉 direction exhibit well formed and smooth sidewalls as a result of the generation of a single type of {1 1̄ 0 1} facets on the inner and outer sidewalls. These {1 1̄ 0 1} facets demonstrate similar cathodoluminescence (CL) spectra that appear to be the superposition of two peaks at photon energies ∼2.5 eV (500 nm) and 2.7 eV (460 nm). Moreover, spatially matched striations are observed in the CL intensity images and surface morphologies of the {1 1̄ 0 1} sidewall facets. The observed striations are found to be related to subtle surface morphologies of the underlying GaN structures.
AB - Triangular microrings have been formed by selective area epitaxy of GaN and InGaN quantum wells (QWs) on patterned (0 0 0 1) AlN/sapphire. SiO2 patterns consist of triangular ring openings oriented with edges parallel to two different orientations. InGaN QW microrings with each edge parallel to the 〈1 1̄ 0 0〉 direction have very rough sidewalls while microrings with each edge parallel to the 〈1 1 2- 0〉 direction exhibit well formed and smooth sidewalls as a result of the generation of a single type of {1 1̄ 0 1} facets on the inner and outer sidewalls. These {1 1̄ 0 1} facets demonstrate similar cathodoluminescence (CL) spectra that appear to be the superposition of two peaks at photon energies ∼2.5 eV (500 nm) and 2.7 eV (460 nm). Moreover, spatially matched striations are observed in the CL intensity images and surface morphologies of the {1 1̄ 0 1} sidewall facets. The observed striations are found to be related to subtle surface morphologies of the underlying GaN structures.
KW - A1. Crystal morphology
KW - A1. Optical properties
KW - A3. Metalorganic vapor phase epitaxy
KW - A3. Quantum wells
KW - A3. Selective area epitaxy
KW - B2. III-Nitride compounds
UR - http://www.scopus.com/inward/record.url?scp=77950296750&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2010.02.035
DO - 10.1016/j.jcrysgro.2010.02.035
M3 - Article
AN - SCOPUS:77950296750
SN - 0022-0248
VL - 312
SP - 1717
EP - 1720
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 10
ER -