Seeding of InP islands on InAs quantum dot templates

G. Medeiros-Ribeiro, R. L. Maltez, A. A. Bernussi, D. Ugarte, W. De Carvalho

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

The ability of stacking layers of islands and their corresponding alignment have prompted a number of studies. The main focus so far has been on stacking self-assembled quantum dot (QD) layers of the same material and composition. Our goal is to create systems of coupled QDs of different electronic properties, aiming at hybridization of their different electronic levels. In this work, we investigate the early stages of the coupling of alternate InAs-InP QD layers through a GaAs spacer layer. We have found that by using an InAs layer containing QDs as seeds, we can control the size, shape and density of InP islands by varying the spacer thickness. We have observed a significant improvement of the InP island size uniformity, as well as an induced size reduction, thus providing an extra degree of tunability previously available only through growth kinetics.

Original languageEnglish
Pages (from-to)6548-6550
Number of pages3
JournalJournal of Applied Physics
Volume89
Issue number11 I
DOIs
StatePublished - Jun 2001

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