### Abstract

We introduce a scaled ensemble Monte Carlo technique for the simulation of semiconductor plasmas at ultrashort times after excitation. The error, from counting statistics, can be decreased directly either by a computationally expensive increase in the number of simulation trajectories or by averaging over long times. The latter approach cannot be applied in studying ultrafast, far-from-equilibrium phenomena. The remaining alternative is to redistribute the computational effort to weight more heavily those regions with low densities. Scaled EMC uses ordinary EMC weighting, but simulates a different function, related by an energy- dependent scaling factor to the usual particle distribution. The simulation trajectories obey the same free-flight equations of motion as ordinary EMC, with no `splitting' of particles or iteration of trajectories. We describe simulations of modulation-doped GaAs structures under applied fields. G-, L- and X-valley carrier populations are determined across more than seven orders of magnitude in density, using only ten thousand simulation points, with fractionally small sampling error across a one-volt energy range. Using standard EMC with the same number of points, sampling statistics necessarily limits the range of simulable densities to less than four decades overall.

Original language | English |
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Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |

Editors | David K. Ferry, Henry M. van Driel |

Pages | 278-285 |

Number of pages | 8 |

State | Published - 1994 |

Event | Ultrafast Phenomena in Semiconductors - Los Angeles, CA, USA Duration: Jan 27 1994 → Jan 28 1994 |

### Publication series

Name | Proceedings of SPIE - The International Society for Optical Engineering |
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Volume | 2142 |

ISSN (Print) | 0277-786X |

### Conference

Conference | Ultrafast Phenomena in Semiconductors |
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City | Los Angeles, CA, USA |

Period | 01/27/94 → 01/28/94 |

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## Cite this

*Proceedings of SPIE - The International Society for Optical Engineering*(pp. 278-285). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 2142).