Safe Operating Area and Long-Term Reliability of 9 kV Silicon Carbide PNPN Super Gate Turn-Off Thyristors

Krystal Lawson, Stephen Bayne, Shellby lacouture, L Chen, Heather O"Brien, A Ogunniyi, C Scozzie

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)862-864
JournalIEEE Electron Device Letters,
StatePublished - Jun 2014

Fingerprint Dive into the research topics of 'Safe Operating Area and Long-Term Reliability of 9 kV Silicon Carbide PNPN Super Gate Turn-Off Thyristors'. Together they form a unique fingerprint.

  • Cite this

    Lawson, K., Bayne, S., lacouture, S., Chen, L., O"Brien, H., Ogunniyi, A., & Scozzie, C. (2014). Safe Operating Area and Long-Term Reliability of 9 kV Silicon Carbide PNPN Super Gate Turn-Off Thyristors. IEEE Electron Device Letters, 862-864.