Safe Operating Area and Long-Term Reliability of 9 kV Silicon Carbide PNPN Super Gate Turn-Off Thyristors

Krystal Lawson, Stephen Bayne, Shellby lacouture, L Chen, Heather O"Brien, A Ogunniyi, C Scozzie

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	862-864
Journal	IEEE Electron Device Letters,
State	Published - Jun 2014

Cite this

@article{582779a59f1d4802820c8e6d79a11b9a,

title = "Safe Operating Area and Long-Term Reliability of 9 kV Silicon Carbide PNPN Super Gate Turn-Off Thyristors",

author = "Krystal Lawson and Stephen Bayne and Shellby lacouture and L Chen and Heather O{"}Brien and A Ogunniyi and C Scozzie",

year = "2014",

month = jun,

language = "English",

pages = "862--864",

journal = "IEEE Electron Device Letters,",

}

TY - JOUR

T1 - Safe Operating Area and Long-Term Reliability of 9 kV Silicon Carbide PNPN Super Gate Turn-Off Thyristors

AU - Lawson, Krystal

AU - Bayne, Stephen

AU - lacouture, Shellby

AU - Chen, L

AU - O"Brien, Heather

AU - Ogunniyi, A

AU - Scozzie, C

PY - 2014/6

Y1 - 2014/6

M3 - Article

SP - 862

EP - 864

JO - IEEE Electron Device Letters,

JF - IEEE Electron Device Letters,

ER -