Ruggedness evaluation of 56mm2, 180 A SiC DMOSFETs as a function of pulse repetition rate for high power applications

K. Lawson, J. Schrock, W. Ray, S. Bayne, L. Cheng, J. Palmour, S. Allen, C. Scozzie

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

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Engineering & Materials Science