Ruggedness evaluation of 56mm2, 180 A SiC DMOSFETs as a function of pulse repetition rate for high power applications

K. Lawson, J. Schrock, W. Ray, S. Bayne, L. Cheng, J. Palmour, S. Allen, C. Scozzie

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

Modern power electronics systems try to maximize power density and efficiency. As such, the active switch is required to safely handle very stressful transient conditions. A 56 mm2, 180 A, SiC DMOSFET manufactured by Cree Inc. is evaluated by electrically stressing the device in a RLC ring-down test system capable of producing peak current in excess of 600 A (>3X rated current) and di/dt's as high as 860 A/μs. The device was hard-switched 5,000 times at repetition rates of 1, 2, 5, and 10 Hz for a total of 20,000 switching events. The device characteristics were monitored every 1,000 shots on a high power curve tracer to determine device degradation. The devices showed no changes in blocking characteristics and minimal changes in on-state characteristics due to shifts in the threshold voltage after 20,000 hard switching events. The threshold voltage shifts over the test period are minimal with a +/- 93 mV deviation from the average of 4.39 V. With the stability of the threshold voltage, on-state characteristics, and blocking characteristics; this shows that this device would perform reliably within commercial applications that include stressful switching conditions.

Original languageEnglish
Title of host publicationProceedings of the 26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages301-304
Number of pages4
ISBN (Print)9781479929177
DOIs
StatePublished - 2014
Event26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014 - Waikoloa, HI, United States
Duration: Jun 15 2014Jun 19 2014

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN (Print)1063-6854

Conference

Conference26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014
CountryUnited States
CityWaikoloa, HI
Period06/15/1406/19/14

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