Ruggedness Evaluation of 56mm2, 180- A SiC DMOSFETs as a Function of Pulse Repetition Rate for High Power Applications”, International Symposium on Power Semiconductor Devices and ICs

Kevin Lawson, James Schrock, William Ray, Stephen Bayne, Lin Chen, John Palmour, S Allen, Charles Scozzie

Research output: Contribution to conferencePaper

Original languageEnglish
StatePublished - Jun 2014

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