Room-Temperature Lasing Action in GaN Quantum Wells in the Infrared 1.5 μm Region

V. X. Ho, T. M. Al Tahtamouni, H. X. Jiang, J. Y. Lin, J. M. Zavada, N. Q. Vinh

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

Large-scale optoelectronics integration is strongly limited by the lack of efficient light sources, which could be integrated with the silicon complementary metal-oxide-semiconductor (CMOS) technology. Persistent efforts continue to achieve efficient light emission from silicon in extending the silicon technology into fully integrated optoelectronic circuits. Here, we report the realization of room-temperature stimulated emission in the technologically crucial 1.5 μm wavelength range from Er-doped GaN multiple-quantum wells on silicon and sapphire. Employing the well-acknowledged variable stripe technique, we have demonstrated an optical gain up to 170 cm-1 in the multiple-quantum well structures. The observation of the stimulated emission is accompanied by the characteristic threshold behavior of emission intensity as a function of pump fluence, spectral line width narrowing, and excitation length. The demonstration of room-temperature lasing at the minimum loss window of optical fibers and in the eye-safe wavelength region of 1.5 μm are highly sought after for use in many applications including defense, industrial processing, communication, medicine, spectroscopy, and imaging. As the synthesis of Er-doped GaN epitaxial layers on silicon and sapphire has been successfully demonstrated, the results laid the foundation for achieving hybrid GaN-Si lasers, providing a new pathway toward full photonic integration for silicon optoelectronics.

Original languageEnglish
Pages (from-to)1303-1309
Number of pages7
JournalACS Photonics
Volume5
Issue number4
DOIs
StatePublished - Apr 18 2018

Keywords

  • GaN
  • infrared laser
  • lasing
  • quantum wells
  • rare earth
  • silicon

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