TY - JOUR
T1 - Robust spin-valley polarization in commensurate Mo S2 /graphene heterostructures
AU - Zhang, Qingming
AU - Du, Luojun
AU - Zhang, Qian
AU - Gong, Benchao
AU - Liao, Mengzhou
AU - Zhu, Jianqi
AU - Yu, Hua
AU - He, Rui
AU - Liu, Kai
AU - Yang, Rong
AU - Shi, Dongxia
AU - Gu, Lin
AU - Yan, Feng
AU - Zhang, Guangyu
N1 - Funding Information:
This research was support by the NSF of China (Grant No. 11474357) and the Ministry of Science and Technology of China (973 Project No. 2016YFA0300504), the National Basic Research Program of China (973 Program, Grants No. 2013CB934500 and No. 2013CBA01602), the Key Research Program of Frontier Sciences, CAS (Grant No. QYZDB-SSW-SLH004), the Strategic Priority Research Program (B) of the Chinese Academy of Sciences, CAS (Grant No. XDB07010100), and the National Science Foundation (NSF) of the U.S. (CAREER Grant No. DMR-1760668).
Publisher Copyright:
© 2018 American Physical Society.
PY - 2018/3/27
Y1 - 2018/3/27
N2 - The investigation and control of quantum degrees of freedom (DoFs) of carriers lie at the heart of condensed-matter physics and next-generation electronics/optoelectronics. van der Waals heterostructures stacked from distinct two-dimensional (2D) crystals offer an unprecedented platform for combining the superior properties of individual 2D materials and manipulating spin, layer, and valley DoFs. MoS2/graphene heterostructures, harboring prominent spin-transport properties of graphene, giant spin-orbit coupling, and spin-valley polarization of MoS2, are predicted as a perfect venue for optospintronics. Here, we report the epitaxial growth of commensurate MoS2 on graphene with high quality by chemical vapor deposition, and demonstrate robust temperature-independent spin-valley polarization at off-resonant excitation. We further show that the helicity of B exciton is larger than that of A exciton, allowing the manipulation of spin bits in the commensurate heterostructures by both optical helicity and wavelength. Our results open a window for controlling spin DoF by light and pave a way for taking spin qubits as information carriers in the next-generation valley-controlled optospintronics.
AB - The investigation and control of quantum degrees of freedom (DoFs) of carriers lie at the heart of condensed-matter physics and next-generation electronics/optoelectronics. van der Waals heterostructures stacked from distinct two-dimensional (2D) crystals offer an unprecedented platform for combining the superior properties of individual 2D materials and manipulating spin, layer, and valley DoFs. MoS2/graphene heterostructures, harboring prominent spin-transport properties of graphene, giant spin-orbit coupling, and spin-valley polarization of MoS2, are predicted as a perfect venue for optospintronics. Here, we report the epitaxial growth of commensurate MoS2 on graphene with high quality by chemical vapor deposition, and demonstrate robust temperature-independent spin-valley polarization at off-resonant excitation. We further show that the helicity of B exciton is larger than that of A exciton, allowing the manipulation of spin bits in the commensurate heterostructures by both optical helicity and wavelength. Our results open a window for controlling spin DoF by light and pave a way for taking spin qubits as information carriers in the next-generation valley-controlled optospintronics.
UR - http://www.scopus.com/inward/record.url?scp=85044960444&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.97.115445
DO - 10.1103/PhysRevB.97.115445
M3 - Article
AN - SCOPUS:85044960444
SN - 2469-9950
VL - 97
JO - Physical Review B
JF - Physical Review B
IS - 11
M1 - 115445
ER -