Robust detection of hydrogen using differential AlGaN/GaN high electron mobility transistor sensing diodes

Hung Ta Wang, T. J. Anderson, F. Ren, Changzhi Li, Zhen Ning Low, Jenshan Lin, B. P. Gila, S. J. Pearton, A. Osinsky, Amir Dabiran

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The use of AlGaN/GaN High Electron Mobility Transistor differential sensing diodes is shown to provide robust detection of 1% H2 in air at 25°C. The active device in the differential pair is coated with 10 nm of Pt to enhance catalytic dissociation of molecular hydrogen, while the reference diode is coated with Ti/Au. The active diode in the pair shows an increase in forward current of several mA at a bias voltage of 2.5V when exposed to 1%H 2 in air. The use of the differential pair removes false alarms due to ambient temperature variations. A wireless module is demonstrated to successfully detect hydrogen leakage.

Original languageEnglish
Title of host publicationECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface
Pages289-295
Number of pages7
Edition2
DOIs
StatePublished - 2007
Event46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting - Chicago, IL, United States
Duration: May 6 2007May 10 2007

Publication series

NameECS Transactions
Number2
Volume6
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting
CountryUnited States
CityChicago, IL
Period05/6/0705/10/07

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