Robust detection of hydrogen using differential AlGaN/GaN high electron mobility transistor sensing diodes

Hung Ta Wang; T. J. Anderson; F. Ren; Changzhi Li; Zhen Ning Low; Jenshan Lin; B. P. Gila; S. J. Pearton; A. Osinsky; Amir Dabiran

doi:10.1149/1.2731197

Robust detection of hydrogen using differential AlGaN/GaN high electron mobility transistor sensing diodes

Hung Ta Wang, T. J. Anderson, F. Ren, Changzhi Li, Zhen Ning Low, Jenshan Lin, B. P. Gila, S. J. Pearton, A. Osinsky, Amir Dabiran

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The use of AlGaN/GaN High Electron Mobility Transistor differential sensing diodes is shown to provide robust detection of 1% H₂ in air at 25°C. The active device in the differential pair is coated with 10 nm of Pt to enhance catalytic dissociation of molecular hydrogen, while the reference diode is coated with Ti/Au. The active diode in the pair shows an increase in forward current of several mA at a bias voltage of 2.5V when exposed to 1%H ₂ in air. The use of the differential pair removes false alarms due to ambient temperature variations. A wireless module is demonstrated to successfully detect hydrogen leakage.

Original language	English
Title of host publication	ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface
Pages	289-295
Number of pages	7
Edition	2
DOIs	https://doi.org/10.1149/1.2731197
State	Published - 2007
Event	46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting - Chicago, IL, United States Duration: May 6 2007 → May 10 2007

Publication series

Name	ECS Transactions
Number	2
Volume	6
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting
Country	United States
City	Chicago, IL
Period	05/6/07 → 05/10/07

Access to Document

10.1149/1.2731197

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Wang, H. T., Anderson, T. J., Ren, F., Li, C., Low, Z. N., Lin, J., Gila, B. P., Pearton, S. J., Osinsky, A., & Dabiran, A. (2007). Robust detection of hydrogen using differential AlGaN/GaN high electron mobility transistor sensing diodes. In ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface (2 ed., pp. 289-295). (ECS Transactions; Vol. 6, No. 2). https://doi.org/10.1149/1.2731197

Wang, Hung Ta ; Anderson, T. J. ; Ren, F. ; Li, Changzhi ; Low, Zhen Ning ; Lin, Jenshan ; Gila, B. P. ; Pearton, S. J. ; Osinsky, A. ; Dabiran, Amir. / Robust detection of hydrogen using differential AlGaN/GaN high electron mobility transistor sensing diodes. ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface. 2. ed. 2007. pp. 289-295 (ECS Transactions; 2).

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title = "Robust detection of hydrogen using differential AlGaN/GaN high electron mobility transistor sensing diodes",

abstract = "The use of AlGaN/GaN High Electron Mobility Transistor differential sensing diodes is shown to provide robust detection of 1% H2 in air at 25°C. The active device in the differential pair is coated with 10 nm of Pt to enhance catalytic dissociation of molecular hydrogen, while the reference diode is coated with Ti/Au. The active diode in the pair shows an increase in forward current of several mA at a bias voltage of 2.5V when exposed to 1%H 2 in air. The use of the differential pair removes false alarms due to ambient temperature variations. A wireless module is demonstrated to successfully detect hydrogen leakage.",

author = "Wang, {Hung Ta} and Anderson, {T. J.} and F. Ren and Changzhi Li and Low, {Zhen Ning} and Jenshan Lin and Gila, {B. P.} and Pearton, {S. J.} and A. Osinsky and Amir Dabiran",

year = "2007",

doi = "10.1149/1.2731197",

language = "English",

isbn = "9781566775519",

series = "ECS Transactions",

number = "2",

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Wang, HT, Anderson, TJ, Ren, F, Li, C, Low, ZN, Lin, J, Gila, BP, Pearton, SJ, Osinsky, A & Dabiran, A 2007, Robust detection of hydrogen using differential AlGaN/GaN high electron mobility transistor sensing diodes. in ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface. 2 edn, ECS Transactions, no. 2, vol. 6, pp. 289-295, 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting, Chicago, IL, United States, 05/6/07. https://doi.org/10.1149/1.2731197

Robust detection of hydrogen using differential AlGaN/GaN high electron mobility transistor sensing diodes. / Wang, Hung Ta; Anderson, T. J.; Ren, F.; Li, Changzhi; Low, Zhen Ning; Lin, Jenshan; Gila, B. P.; Pearton, S. J.; Osinsky, A.; Dabiran, Amir.

ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface. 2. ed. 2007. p. 289-295 (ECS Transactions; Vol. 6, No. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Robust detection of hydrogen using differential AlGaN/GaN high electron mobility transistor sensing diodes

AU - Wang, Hung Ta

AU - Anderson, T. J.

AU - Ren, F.

AU - Li, Changzhi

AU - Low, Zhen Ning

AU - Lin, Jenshan

AU - Gila, B. P.

AU - Pearton, S. J.

AU - Osinsky, A.

AU - Dabiran, Amir

PY - 2007

Y1 - 2007

N2 - The use of AlGaN/GaN High Electron Mobility Transistor differential sensing diodes is shown to provide robust detection of 1% H2 in air at 25°C. The active device in the differential pair is coated with 10 nm of Pt to enhance catalytic dissociation of molecular hydrogen, while the reference diode is coated with Ti/Au. The active diode in the pair shows an increase in forward current of several mA at a bias voltage of 2.5V when exposed to 1%H 2 in air. The use of the differential pair removes false alarms due to ambient temperature variations. A wireless module is demonstrated to successfully detect hydrogen leakage.

AB - The use of AlGaN/GaN High Electron Mobility Transistor differential sensing diodes is shown to provide robust detection of 1% H2 in air at 25°C. The active device in the differential pair is coated with 10 nm of Pt to enhance catalytic dissociation of molecular hydrogen, while the reference diode is coated with Ti/Au. The active diode in the pair shows an increase in forward current of several mA at a bias voltage of 2.5V when exposed to 1%H 2 in air. The use of the differential pair removes false alarms due to ambient temperature variations. A wireless module is demonstrated to successfully detect hydrogen leakage.

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T3 - ECS Transactions

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BT - ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface

Y2 - 6 May 2007 through 10 May 2007

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Wang HT, Anderson TJ, Ren F, Li C, Low ZN, Lin J et al. Robust detection of hydrogen using differential AlGaN/GaN high electron mobility transistor sensing diodes. In ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface. 2 ed. 2007. p. 289-295. (ECS Transactions; 2). https://doi.org/10.1149/1.2731197