@inproceedings{bcaf5e8be64e41ee9dcdc55607cbe4f9,
title = "Robust detection of hydrogen using differential AlGaN/GaN high electron mobility transistor sensing diodes",
abstract = "The use of AlGaN/GaN High Electron Mobility Transistor differential sensing diodes is shown to provide robust detection of 1% H2 in air at 25°C. The active device in the differential pair is coated with 10 nm of Pt to enhance catalytic dissociation of molecular hydrogen, while the reference diode is coated with Ti/Au. The active diode in the pair shows an increase in forward current of several mA at a bias voltage of 2.5V when exposed to 1%H 2 in air. The use of the differential pair removes false alarms due to ambient temperature variations. A wireless module is demonstrated to successfully detect hydrogen leakage.",
author = "Wang, {Hung Ta} and Anderson, {T. J.} and F. Ren and Changzhi Li and Low, {Zhen Ning} and Jenshan Lin and Gila, {B. P.} and Pearton, {S. J.} and A. Osinsky and Amir Dabiran",
year = "2007",
doi = "10.1149/1.2731197",
language = "English",
isbn = "9781566775519",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "2",
pages = "289--295",
booktitle = "ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface",
edition = "2",
note = "null ; Conference date: 06-05-2007 Through 10-05-2007",
}