Abstract
An opposed contact photoconductive semiconductor switch (PCSS) made from EL2/C compensation is analyzed and compared with that of made from GaAs material. Physical conditions inside the device during the switching operation and possible effects of low doping vs. high resistivity through compensation on the switch rise time are studied. Results show that non-compensated materials behave as relaxation semiconductors and the recombination mechanism tends to have an adverse effect on the rise time of the device.
| Original language | English |
|---|---|
| Pages (from-to) | 291 |
| Number of pages | 1 |
| Journal | IEEE International Conference on Plasma Science |
| State | Published - 1999 |
| Event | The 26th IEEE International Conference on Plasma Science (ICOPS99) - Monterey, CA, USA Duration: Jun 20 1999 → Jun 24 1999 |
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Islam, N. E., Schamiloglu, E., Fleddermann, C. B., Schoenberg, J. S. H., & Joshi, R. P. (1999). Rise time considerations for photoconductive switch materials used in high power UWB microwave applications. IEEE International Conference on Plasma Science, 291.