Rise time considerations for photoconductive switch materials used in high power UWB microwave applications

N. E. Islam; E. Schamiloglu; C. B. Fleddermann; J. S.H. Schoenberg; R. P. Joshi

Rise time considerations for photoconductive switch materials used in high power UWB microwave applications

N. E. Islam, E. Schamiloglu, C. B. Fleddermann, J. S.H. Schoenberg, R. P. Joshi

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

An opposed contact photoconductive semiconductor switch (PCSS) made from EL2/C compensation is analyzed and compared with that of made from GaAs material. Physical conditions inside the device during the switching operation and possible effects of low doping vs. high resistivity through compensation on the switch rise time are studied. Results show that non-compensated materials behave as relaxation semiconductors and the recombination mechanism tends to have an adverse effect on the rise time of the device.

Original language	English
Pages (from-to)	291
Number of pages	1
Journal	IEEE International Conference on Plasma Science
State	Published - 1999
Event	The 26th IEEE International Conference on Plasma Science (ICOPS99) - Monterey, CA, USA Duration: Jun 20 1999 → Jun 24 1999

Cite this

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title = "Rise time considerations for photoconductive switch materials used in high power UWB microwave applications",

abstract = "An opposed contact photoconductive semiconductor switch (PCSS) made from EL2/C compensation is analyzed and compared with that of made from GaAs material. Physical conditions inside the device during the switching operation and possible effects of low doping vs. high resistivity through compensation on the switch rise time are studied. Results show that non-compensated materials behave as relaxation semiconductors and the recombination mechanism tends to have an adverse effect on the rise time of the device.",

author = "Islam, {N. E.} and E. Schamiloglu and Fleddermann, {C. B.} and Schoenberg, {J. S.H.} and Joshi, {R. P.}",

year = "1999",

language = "English",

pages = "291",

journal = "IEEE International Conference on Plasma Science",

issn = "0730-9244",

note = "null ; Conference date: 20-06-1999 Through 24-06-1999",

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TY - JOUR

T1 - Rise time considerations for photoconductive switch materials used in high power UWB microwave applications

AU - Islam, N. E.

AU - Schamiloglu, E.

AU - Fleddermann, C. B.

AU - Schoenberg, J. S.H.

AU - Joshi, R. P.

PY - 1999

Y1 - 1999

N2 - An opposed contact photoconductive semiconductor switch (PCSS) made from EL2/C compensation is analyzed and compared with that of made from GaAs material. Physical conditions inside the device during the switching operation and possible effects of low doping vs. high resistivity through compensation on the switch rise time are studied. Results show that non-compensated materials behave as relaxation semiconductors and the recombination mechanism tends to have an adverse effect on the rise time of the device.

AB - An opposed contact photoconductive semiconductor switch (PCSS) made from EL2/C compensation is analyzed and compared with that of made from GaAs material. Physical conditions inside the device during the switching operation and possible effects of low doping vs. high resistivity through compensation on the switch rise time are studied. Results show that non-compensated materials behave as relaxation semiconductors and the recombination mechanism tends to have an adverse effect on the rise time of the device.

UR - http://www.scopus.com/inward/record.url?scp=0033326513&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033326513

SP - 291

JO - IEEE International Conference on Plasma Science

JF - IEEE International Conference on Plasma Science

SN - 0730-9244

Y2 - 20 June 1999 through 24 June 1999

ER -

Rise time considerations for photoconductive switch materials used in high power UWB microwave applications

Abstract

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