Rise time considerations for photoconductive switch materials used in high power UWB microwave applications

N. E. Islam, E. Schamiloglu, C. B. Fleddermann, J. S.H. Schoenberg, R. P. Joshi

Research output: Contribution to journalConference article

Abstract

An opposed contact photoconductive semiconductor switch (PCSS) made from EL2/C compensation is analyzed and compared with that of made from GaAs material. Physical conditions inside the device during the switching operation and possible effects of low doping vs. high resistivity through compensation on the switch rise time are studied. Results show that non-compensated materials behave as relaxation semiconductors and the recombination mechanism tends to have an adverse effect on the rise time of the device.

Original languageEnglish
Pages (from-to)291
Number of pages1
JournalIEEE International Conference on Plasma Science
StatePublished - 1999
EventThe 26th IEEE International Conference on Plasma Science (ICOPS99) - Monterey, CA, USA
Duration: Jun 20 1999Jun 24 1999

Fingerprint Dive into the research topics of 'Rise time considerations for photoconductive switch materials used in high power UWB microwave applications'. Together they form a unique fingerprint.

  • Cite this