RF linearity study of SiGe HBTs for low power RFIC design. I

Xiaojuen Yuan, D. Y.C. Lie, L. E. Larson, J. Blonski, J. Gross, M. Kumar, J. Mecke, A. Senior, Y. Chen, A. Poh, D. Harame

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

The RF linearity characteristics of a 0.2 μm/120 GHz fT silicon germanium (SiGe) heterojunction bipolar transistor (HBT) are analyzed using a simplified VBIC model. This model is verified using on-wafer two-tone tests. The study shows that the extrinsic emitter resistance, re, has a major impact on transistor linearity through negative feedback and feedback induced cancellation of the third-order intermodulation products generated by the exponential nonlinearity of the transconductance. The base-collector-junction capacitance also contributes to the distortion at high bias currents. The distortion introduced by the weak avalanche current at high collector voltages is also appreciable. The nonlinearity of the base-emitter capacitance (including junction capacitance and diffusion capacitance) and the base current have minimum impact on transistor linearity compared to the effects mentioned above for frequencies under 5 GHz.

Original languageEnglish
Title of host publicationICMMT 2002 - 2002 3rd International Conference on Microwave and Millimeter Wave Technology
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages70-73
Number of pages4
ISBN (Electronic)078037486X, 9780780374867
DOIs
StatePublished - 2002
Event3rd International Conference on Microwave and Millimeter Wave Technology, ICMMT 2002 - Beijing, China
Duration: Aug 17 2002Aug 19 2002

Publication series

NameICMMT 2002 - 2002 3rd International Conference on Microwave and Millimeter Wave Technology

Conference

Conference3rd International Conference on Microwave and Millimeter Wave Technology, ICMMT 2002
CountryChina
CityBeijing
Period08/17/0208/19/02

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    Yuan, X., Lie, D. Y. C., Larson, L. E., Blonski, J., Gross, J., Kumar, M., Mecke, J., Senior, A., Chen, Y., Poh, A., & Harame, D. (2002). RF linearity study of SiGe HBTs for low power RFIC design. I. In ICMMT 2002 - 2002 3rd International Conference on Microwave and Millimeter Wave Technology (pp. 70-73). [1187637] (ICMMT 2002 - 2002 3rd International Conference on Microwave and Millimeter Wave Technology). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICMMT.2002.1187637