TY - GEN
T1 - RF linearity study of SiGe HBTs for low power RFIC design. I
AU - Yuan, Xiaojuen
AU - Lie, D. Y.C.
AU - Larson, L. E.
AU - Blonski, J.
AU - Gross, J.
AU - Kumar, M.
AU - Mecke, J.
AU - Senior, A.
AU - Chen, Y.
AU - Poh, A.
AU - Harame, D.
N1 - Publisher Copyright:
© 2002 IEEE.
PY - 2002
Y1 - 2002
N2 - The RF linearity characteristics of a 0.2 μm/120 GHz fT silicon germanium (SiGe) heterojunction bipolar transistor (HBT) are analyzed using a simplified VBIC model. This model is verified using on-wafer two-tone tests. The study shows that the extrinsic emitter resistance, re, has a major impact on transistor linearity through negative feedback and feedback induced cancellation of the third-order intermodulation products generated by the exponential nonlinearity of the transconductance. The base-collector-junction capacitance also contributes to the distortion at high bias currents. The distortion introduced by the weak avalanche current at high collector voltages is also appreciable. The nonlinearity of the base-emitter capacitance (including junction capacitance and diffusion capacitance) and the base current have minimum impact on transistor linearity compared to the effects mentioned above for frequencies under 5 GHz.
AB - The RF linearity characteristics of a 0.2 μm/120 GHz fT silicon germanium (SiGe) heterojunction bipolar transistor (HBT) are analyzed using a simplified VBIC model. This model is verified using on-wafer two-tone tests. The study shows that the extrinsic emitter resistance, re, has a major impact on transistor linearity through negative feedback and feedback induced cancellation of the third-order intermodulation products generated by the exponential nonlinearity of the transconductance. The base-collector-junction capacitance also contributes to the distortion at high bias currents. The distortion introduced by the weak avalanche current at high collector voltages is also appreciable. The nonlinearity of the base-emitter capacitance (including junction capacitance and diffusion capacitance) and the base current have minimum impact on transistor linearity compared to the effects mentioned above for frequencies under 5 GHz.
UR - http://www.scopus.com/inward/record.url?scp=84966549482&partnerID=8YFLogxK
U2 - 10.1109/ICMMT.2002.1187637
DO - 10.1109/ICMMT.2002.1187637
M3 - Conference contribution
AN - SCOPUS:84966549482
T3 - ICMMT 2002 - 2002 3rd International Conference on Microwave and Millimeter Wave Technology
SP - 70
EP - 73
BT - ICMMT 2002 - 2002 3rd International Conference on Microwave and Millimeter Wave Technology
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 3rd International Conference on Microwave and Millimeter Wave Technology, ICMMT 2002
Y2 - 17 August 2002 through 19 August 2002
ER -