Abstract
The radio frequency μSR technique developed at TRIUMF was used to measure the temperature dependence of the diamagnetic muon, Mu, and Mu* amplitudes in silicon between 10 K and 500 K. Six samples doped with phosphorus (n-type) and boron (p-type) in the concentration range 1011 to 1015 cm-3 were studied. In pure Si a very good fit over the whole temperature range is obtained from a model that includes the ionization of Mu* and Mu to a bond centered μ+ followed at high temperature by charge exchange involving Mu.
Original language | English |
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Pages (from-to) | 673-679 |
Number of pages | 7 |
Journal | Hyperfine Interactions |
Volume | 86 |
Issue number | 1 |
DOIs | |
State | Published - Dec 1994 |