Reversible metallization and carrier transport behavior of In2S3 under high pressure

Yuqiang Li, Yang Gao, Ningru Xiao, Pingfan Ning, Liyuan Yu, Jianxin Zhang, Pingjuan Niu, Yanzhang Ma, Chunxiao Gao

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Abstract

The electrical transport properties of indium trisulfide (In2S3) under high pressure were investigated using the in situ Hall-effect and temperature dependent resistivity measurements. Resistivity, Hall coefficient, carrier concentration, and mobility were obtained at pressures up to 41.6 GPa. Pressure induced metallization of In2S3 occurred at approximately 6.8 GPa. This was determined by measuring temperature dependent resistivity. The metallization transition was also determined from compression electrical parameters, and the decompression electrical parameters indicated that the metallization was a reversible transition. The main cause of the sharp decline in resistivity was the increase in carrier concentration at 6.8 GPa. Superconductivity was not observed at the pressures (up to 32.5 GPa) and temperatures (100-300 K) used in the experiment.

Original languageEnglish
Article number115202
JournalAIP Advances
Volume8
Issue number11
DOIs
StatePublished - Nov 1 2018

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    Li, Y., Gao, Y., Xiao, N., Ning, P., Yu, L., Zhang, J., Niu, P., Ma, Y., & Gao, C. (2018). Reversible metallization and carrier transport behavior of In2S3 under high pressure. AIP Advances, 8(11), [115202]. https://doi.org/10.1063/1.5054752