Reversible metallization and carrier transport behavior of In2S3 under high pressure

Yuqiang Li; Yang Gao; Ningru Xiao; Pingfan Ning; Liyuan Yu; Jianxin Zhang; Pingjuan Niu; Yanzhang Ma; Chunxiao Gao

doi:10.1063/1.5054752

Reversible metallization and carrier transport behavior of In₂S₃ under high pressure

Yuqiang Li, Yang Gao, Ningru Xiao, Pingfan Ning, Liyuan Yu, Jianxin Zhang, Pingjuan Niu, Yanzhang Ma, Chunxiao Gao

Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The electrical transport properties of indium trisulfide (In₂S₃) under high pressure were investigated using the in situ Hall-effect and temperature dependent resistivity measurements. Resistivity, Hall coefficient, carrier concentration, and mobility were obtained at pressures up to 41.6 GPa. Pressure induced metallization of In₂S₃ occurred at approximately 6.8 GPa. This was determined by measuring temperature dependent resistivity. The metallization transition was also determined from compression electrical parameters, and the decompression electrical parameters indicated that the metallization was a reversible transition. The main cause of the sharp decline in resistivity was the increase in carrier concentration at 6.8 GPa. Superconductivity was not observed at the pressures (up to 32.5 GPa) and temperatures (100-300 K) used in the experiment.

Original language	English
Article number	115202
Journal	AIP Advances
Volume	8
Issue number	11
DOIs	https://doi.org/10.1063/1.5054752
State	Published - Nov 1 2018

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title = "Reversible metallization and carrier transport behavior of In2S3 under high pressure",

abstract = "The electrical transport properties of indium trisulfide (In2S3) under high pressure were investigated using the in situ Hall-effect and temperature dependent resistivity measurements. Resistivity, Hall coefficient, carrier concentration, and mobility were obtained at pressures up to 41.6 GPa. Pressure induced metallization of In2S3 occurred at approximately 6.8 GPa. This was determined by measuring temperature dependent resistivity. The metallization transition was also determined from compression electrical parameters, and the decompression electrical parameters indicated that the metallization was a reversible transition. The main cause of the sharp decline in resistivity was the increase in carrier concentration at 6.8 GPa. Superconductivity was not observed at the pressures (up to 32.5 GPa) and temperatures (100-300 K) used in the experiment.",

author = "Yuqiang Li and Yang Gao and Ningru Xiao and Pingfan Ning and Liyuan Yu and Jianxin Zhang and Pingjuan Niu and Yanzhang Ma and Chunxiao Gao",

note = "Funding Information: This work was supported by the National Natural Science Foundation of China (Grant No. 11674404, 11605145, 11804249, 61504093); the Natural Science Foundation of Tianjin City (Grant No. 18JCQNJC03700, 15JCQNJC41800); the Open Project of State Key Laboratory of Superhard Materials (Jilin University) (Grant No. 201709); the Program for Innovative Research Team in University of Tianjin (Grant No. TD13-5035); and the Science & Technology Development Fund of Tianjin Education Commission for Higher Education (Grant No. 2018KJ210, 2017ZD06). Publisher Copyright: {\textcopyright} 2018 Author(s).",

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doi = "10.1063/1.5054752",

language = "English",

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T1 - Reversible metallization and carrier transport behavior of In2S3 under high pressure

AU - Li, Yuqiang

AU - Gao, Yang

AU - Xiao, Ningru

AU - Ning, Pingfan

AU - Yu, Liyuan

AU - Zhang, Jianxin

AU - Niu, Pingjuan

AU - Ma, Yanzhang

AU - Gao, Chunxiao

N1 - Funding Information: This work was supported by the National Natural Science Foundation of China (Grant No. 11674404, 11605145, 11804249, 61504093); the Natural Science Foundation of Tianjin City (Grant No. 18JCQNJC03700, 15JCQNJC41800); the Open Project of State Key Laboratory of Superhard Materials (Jilin University) (Grant No. 201709); the Program for Innovative Research Team in University of Tianjin (Grant No. TD13-5035); and the Science & Technology Development Fund of Tianjin Education Commission for Higher Education (Grant No. 2018KJ210, 2017ZD06). Publisher Copyright: © 2018 Author(s).

PY - 2018/11/1

Y1 - 2018/11/1

N2 - The electrical transport properties of indium trisulfide (In2S3) under high pressure were investigated using the in situ Hall-effect and temperature dependent resistivity measurements. Resistivity, Hall coefficient, carrier concentration, and mobility were obtained at pressures up to 41.6 GPa. Pressure induced metallization of In2S3 occurred at approximately 6.8 GPa. This was determined by measuring temperature dependent resistivity. The metallization transition was also determined from compression electrical parameters, and the decompression electrical parameters indicated that the metallization was a reversible transition. The main cause of the sharp decline in resistivity was the increase in carrier concentration at 6.8 GPa. Superconductivity was not observed at the pressures (up to 32.5 GPa) and temperatures (100-300 K) used in the experiment.

AB - The electrical transport properties of indium trisulfide (In2S3) under high pressure were investigated using the in situ Hall-effect and temperature dependent resistivity measurements. Resistivity, Hall coefficient, carrier concentration, and mobility were obtained at pressures up to 41.6 GPa. Pressure induced metallization of In2S3 occurred at approximately 6.8 GPa. This was determined by measuring temperature dependent resistivity. The metallization transition was also determined from compression electrical parameters, and the decompression electrical parameters indicated that the metallization was a reversible transition. The main cause of the sharp decline in resistivity was the increase in carrier concentration at 6.8 GPa. Superconductivity was not observed at the pressures (up to 32.5 GPa) and temperatures (100-300 K) used in the experiment.

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U2 - 10.1063/1.5054752

DO - 10.1063/1.5054752

M3 - Article

AN - SCOPUS:85056243394

SN - 2158-3226

VL - 8

JO - AIP Advances

JF - AIP Advances

IS - 11

M1 - 115202

ER -

Reversible metallization and carrier transport behavior of In₂S₃ under high pressure

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