Reverse recovery of 50 V silicon charge plasma pin diode

Sara Hahmady; Stephen Bayne

doi:10.1109/ACCESS.2020.3023641

Reverse recovery of 50 V silicon charge plasma pin diode

Sara Hahmady, Stephen Bayne

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

In this article, a novel approach is used for the first time to design a high-voltage PIN diode without any chemical doping process of cathode and anode region. This approach favors ‘‘p’’ and ‘‘n’’ plasma region formation through various metal contacts with appropriate work-functions for anode and cathode respectively. In this study, the forward and reverse characteristics, as well as the switching performance (reverse recovery) of this novel device, charge plasma (CP) PIN diode, were compared with the Schottky diode and the conventional PIN diode using TCAD simulation.

Original language	English
Pages (from-to)	170588-170594
Number of pages	7
Journal	IEEE Access
Volume	8
DOIs	https://doi.org/10.1109/ACCESS.2020.3023641
State	Published - 2020

Keywords

Charge plasma
PIN diode
Reverse recovery

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10.1109/ACCESS.2020.3023641

Cite this

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abstract = "In this article, a novel approach is used for the first time to design a high-voltage PIN diode without any chemical doping process of cathode and anode region. This approach favors {\textquoteleft}{\textquoteleft}p{\textquoteright}{\textquoteright} and {\textquoteleft}{\textquoteleft}n{\textquoteright}{\textquoteright} plasma region formation through various metal contacts with appropriate work-functions for anode and cathode respectively. In this study, the forward and reverse characteristics, as well as the switching performance (reverse recovery) of this novel device, charge plasma (CP) PIN diode, were compared with the Schottky diode and the conventional PIN diode using TCAD simulation.",

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AB - In this article, a novel approach is used for the first time to design a high-voltage PIN diode without any chemical doping process of cathode and anode region. This approach favors ‘‘p’’ and ‘‘n’’ plasma region formation through various metal contacts with appropriate work-functions for anode and cathode respectively. In this study, the forward and reverse characteristics, as well as the switching performance (reverse recovery) of this novel device, charge plasma (CP) PIN diode, were compared with the Schottky diode and the conventional PIN diode using TCAD simulation.

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KW - PIN diode

KW - Reverse recovery

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Reverse recovery of 50 V silicon charge plasma pin diode

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Keywords

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