Reverse recovery of 50 V silicon charge plasma pin diode

Sara Hahmady, Stephen Bayne

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


In this article, a novel approach is used for the first time to design a high-voltage PIN diode without any chemical doping process of cathode and anode region. This approach favors ‘‘p’’ and ‘‘n’’ plasma region formation through various metal contacts with appropriate work-functions for anode and cathode respectively. In this study, the forward and reverse characteristics, as well as the switching performance (reverse recovery) of this novel device, charge plasma (CP) PIN diode, were compared with the Schottky diode and the conventional PIN diode using TCAD simulation.

Original languageEnglish
Pages (from-to)170588-170594
Number of pages7
JournalIEEE Access
StatePublished - 2020


  • Charge plasma
  • PIN diode
  • Reverse recovery


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