Requirements for low intermodulation distortion in GaN-AlxGa1-xN high electron mobility transistors: A model assessment

Tao Li, Ravindra P. Joshi, Romeo D. Del Rosario

Research output: Contribution to journalArticle

21 Scopus citations

Abstract

A model analysis of the large-signal characteristics of GaN-AlxGa1-xN high-electron mobility transistors (HEMTs) with particular emphasis on intermodulation distortion (IMD) and the third-order intercept point. Since the nonlinearity depends critically on the carrier transport behavior, a Monte Carlo (MC) based numerical simulation scheme has been employed. The focus is to identify parameters and their interdependencies with a view of setting optimal limits for enhanced microwave performance. A case is made for increased mole fraction for the barrier layer, reducing the transit length, and introducing a thin AlN interfacial layer for suppressing real space transfer for enhancing the device performance. Finally, high-temperature predictions of the nonlinear behavior and IMD have been made, by carrying out the MC simulations at 600 K. In a process a favorable case is made for the GaN system as a potential candidate for microwave and RF applications at elevated temperatures.

Original languageEnglish
Pages (from-to)1511-1518
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume49
Issue number9
DOIs
StatePublished - Sep 2002

Keywords

  • Distortion
  • GaN
  • High-electron mobility transistor (HEMT)
  • Intermodulation
  • Monte Carlo (MC)

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