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Dive into the research topics of 'Reliable operation of SiC junction-field-effect-transistor subjected to over 2 million 600-V hard switch stressing events'. Together they form a unique fingerprint.- Sort by
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B. Steiner, S. B. Bayne, V. Veliadis, H. C. Ha, D. Urciuoli, N. El-Hinnawy, P. Borodulin, C. Scozzie
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review