@inproceedings{fc1cc6129e124430af27920827d409ab,
title = "Reliable operation of SiC junction-field-effect-transistor subjected to over 2 million 600-V hard switch stressing events",
abstract = "A necessity for the successful commercialization of SiC power devices is their long term reliability under the switching conditions encountered in the field. Normally-ON 1200 V SiC JFETs were stressed in repetitive hard-switching conditions to determine their fault handling capabilities. The switching pulses were generated from an RLC circuit, where energy initially stored in capacitors discharges through the JFET into a resistive load. The hard-switching included one million repetitive pulsed hard-switching events at 25 °C from a drain blocking-voltage of 600 V to an on-state current of 67 A, and an additional one million 600-V/63-A pulsed hard-switching events at 150 °C. The JFET conduction and blocking-voltage characteristics are virtually unchanged after over two million hard switching events proving the devices are reliable for handling high surge- current faults like those encountered in bidirectional circuit breaker applications.",
keywords = "1200-V, 4H-SiC, Bidirectional, Fault isolation, Four quadrant, Hard switching, High temperature, High voltage, JFET, Normally-ON, Pulsing, Reliability, Vertical channel",
author = "B. Steiner and Bayne, {S. B.} and V. Veliadis and Ha, {H. C.} and D. Urciuoli and N. El-Hinnawy and P. Borodulin and C. Scozzie",
year = "2013",
doi = "10.4028/www.scientific.net/MSF.740-742.921",
language = "English",
isbn = "9783037856246",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "921--924",
editor = "Lebedev, {Alexander A.} and Davydov, {Sergey Yu.} and Ivanov, {Pavel A.} and Levinshtein, {Mikhail E.}",
booktitle = "Silicon Carbide and Related Materials 2012, ECSCRM 2012",
note = "9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012 ; Conference date: 02-09-2012 Through 06-09-2012",
}