| Original language | English |
|---|---|
| State | Published - May 2012 |
Reliable Operation of SiC Junction-Field-Effect-Transistor Subjected to Over 2 Million 600-V Hard Switch Stressing Events
Brien Steiner, Stephen Bayne, Victor Veliadis, H Ha, D Urciuoli, Skip Scozzie
Research output: Contribution to conference › Paper › peer-review