Reliable Operation of SiC Junction-Field-Effect-Transistor Subjected to Over 2 Million 600-V Hard Switch Stressing Events

Brien Steiner, Stephen Bayne, Victor Veliadis, H Ha, D Urciuoli, Skip Scozzie

Research output: Contribution to conferencePaperpeer-review

Original languageEnglish
StatePublished - May 2012

Fingerprint Dive into the research topics of 'Reliable Operation of SiC Junction-Field-Effect-Transistor Subjected to Over 2 Million 600-V Hard Switch Stressing Events'. Together they form a unique fingerprint.

Cite this