Original language | English |
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Pages (from-to) | 921-924 |
Journal | Material Science Forum |
State | Published - Mar 2013 |
Reliable Operation of SiC Junction-Field-Effect-Transistor Subjected to Over 2 Million 600 V Hard Switch Stressing Events
Brian Steiner, Stephen Bayne, Victor Veliadis, H.C. Ha, Damina Urciuoli, N EL-Hinnawy, P Borodulin, Skip Scozzie
Research output: Contribution to journal › Article › peer-review