Reliable Operation of SiC Junction-Field-Effect-Transistor Subjected to Over 2 Million 600 V Hard Switch Stressing Events

Brian Steiner, Stephen Bayne, Victor Veliadis, H.C. Ha, Damina Urciuoli, N EL-Hinnawy, P Borodulin, Skip Scozzie

Research output: Contribution to journal › Article › peer-review

Cite this

@article{44359668be7a468f803f796fe12c17f4,

title = "Reliable Operation of SiC Junction-Field-Effect-Transistor Subjected to Over 2 Million 600 V Hard Switch Stressing Events",

author = "Brian Steiner and Stephen Bayne and Victor Veliadis and H.C. Ha and Damina Urciuoli and N EL-Hinnawy and P Borodulin and Skip Scozzie",

year = "2013",

month = mar,

language = "English",

pages = "921--924",

journal = "Material Science Forum",

}

TY - JOUR

T1 - Reliable Operation of SiC Junction-Field-Effect-Transistor Subjected to Over 2 Million 600 V Hard Switch Stressing Events

AU - Steiner, Brian

AU - Bayne, Stephen

AU - Veliadis, Victor

AU - Ha, H.C.

AU - Urciuoli, Damina

AU - EL-Hinnawy, N

AU - Borodulin, P

AU - Scozzie, Skip

PY - 2013/3

Y1 - 2013/3

M3 - Article

SP - 921

EP - 924

JO - Material Science Forum

JF - Material Science Forum

ER -