Reliable Operation of SiC Junction-Field-Effect-Transistor Subjected to Over 2 Million 600 V Hard Switch Stressing Events

Brian Steiner, Stephen Bayne, Victor Veliadis, H.C. Ha, Damina Urciuoli, N EL-Hinnawy, P Borodulin, Skip Scozzie

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)921-924
JournalMaterial Science Forum
StatePublished - Mar 2013

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