Reliable Operation of a 1200 V SiC Vertical Junction Field Effect Transistor Subjected to 16,000 Pulse Hard switching Stress

Kevin Lawson, G Alvarez, Stephen Bayne, Victor Veliadis, H Ha, D Urciuoli, Skip Scozzie

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)1021-1024
JournalMaterials Science Forum
StatePublished - Feb 2012

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