Reliable Operation of a 1200 V SiC Vertical Junction Field Effect Transistor Subjected to 16,000 Pulse Hard switching Stress

Kevin Lawson, G Alvarez, Stephen Bayne, Victor Veliadis, H Ha, D Urciuoli, Skip Scozzie

Research output: Contribution to journal › Article › peer-review

Cite this

@article{b32e53b294e74a4a850e59bed97758f0,

title = "Reliable Operation of a 1200 V SiC Vertical Junction Field Effect Transistor Subjected to 16,000 Pulse Hard switching Stress",

author = "Kevin Lawson and G Alvarez and Stephen Bayne and Victor Veliadis and H Ha and D Urciuoli and Skip Scozzie",

year = "2012",

month = feb,

language = "English",

pages = "1021--1024",

journal = "Materials Science Forum",

}

TY - JOUR

T1 - Reliable Operation of a 1200 V SiC Vertical Junction Field Effect Transistor Subjected to 16,000 Pulse Hard switching Stress

AU - Lawson, Kevin

AU - Alvarez, G

AU - Bayne, Stephen

AU - Veliadis, Victor

AU - Ha, H

AU - Urciuoli, D

AU - Scozzie, Skip

PY - 2012/2

Y1 - 2012/2

M3 - Article

SP - 1021

EP - 1024

JO - Materials Science Forum

JF - Materials Science Forum

ER -