Reliable operation of 1200-V SiC vertical junction-field-effect-transistor subjected to 16,000-pulse hard switching stressing

K. Lawson, G. Alvarez, S. B. Bayne, V. Veliadis, H. C. Ha, D. Urciuoli, C. Scozzie

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

A necessity for the successful commercialization of SiC power devices is their long term reliability under the switching conditions encountered in application. Normally-ON 1200 V SiC JFETs were stressed in hard-switching conditions to determine their fault handling capabilities. The hard-switching included single shot tests ranging from drain voltages of 100 V to 500 V and repetition rate tests at 1 Hz, 5 Hz, 10 Hz, and 100 Hz with peak currents exceeding 100 A (8 times the rated current at 250 W/cm2). The JFET conduction and blocking-voltage characteristics are unchanged after 16,000 pulsed and numerous single shot hard switching events proving the devices are reliable for handling high surge-current faults.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2011, ICSCRM 2011
EditorsRobert P. Devaty, Michael Dudley, T. Paul Chow, Philip G. Neudeck
PublisherTrans Tech Publications Ltd
Pages1021-1024
Number of pages4
ISBN (Print)9783037854198
DOIs
StatePublished - 2012
Event14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 - Cleveland, OH, United States
Duration: Sep 11 2011Sep 16 2011

Publication series

NameMaterials Science Forum
Volume717-720
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

Conference14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
CountryUnited States
CityCleveland, OH
Period09/11/1109/16/11

Keywords

  • 1200-V
  • 4H-SiC
  • Bidirectional
  • Fault isolation
  • Four quandrant
  • JFET
  • Normally-ON
  • Vertical channel

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    Lawson, K., Alvarez, G., Bayne, S. B., Veliadis, V., Ha, H. C., Urciuoli, D., & Scozzie, C. (2012). Reliable operation of 1200-V SiC vertical junction-field-effect-transistor subjected to 16,000-pulse hard switching stressing. In R. P. Devaty, M. Dudley, T. P. Chow, & P. G. Neudeck (Eds.), Silicon Carbide and Related Materials 2011, ICSCRM 2011 (pp. 1021-1024). (Materials Science Forum; Vol. 717-720). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.717-720.1021