@inproceedings{233d274bfbb643cb863df89fa5d67cc4,
title = "Reliable operation of 1200-V SiC vertical junction-field-effect-transistor subjected to 16,000-pulse hard switching stressing",
abstract = "A necessity for the successful commercialization of SiC power devices is their long term reliability under the switching conditions encountered in application. Normally-ON 1200 V SiC JFETs were stressed in hard-switching conditions to determine their fault handling capabilities. The hard-switching included single shot tests ranging from drain voltages of 100 V to 500 V and repetition rate tests at 1 Hz, 5 Hz, 10 Hz, and 100 Hz with peak currents exceeding 100 A (8 times the rated current at 250 W/cm2). The JFET conduction and blocking-voltage characteristics are unchanged after 16,000 pulsed and numerous single shot hard switching events proving the devices are reliable for handling high surge-current faults.",
keywords = "1200-V, 4H-SiC, Bidirectional, Fault isolation, Four quandrant, JFET, Normally-ON, Vertical channel",
author = "K. Lawson and G. Alvarez and Bayne, {S. B.} and V. Veliadis and Ha, {H. C.} and D. Urciuoli and C. Scozzie",
year = "2012",
doi = "10.4028/www.scientific.net/MSF.717-720.1021",
language = "English",
isbn = "9783037854198",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "1021--1024",
editor = "Devaty, {Robert P.} and Michael Dudley and Chow, {T. Paul} and Neudeck, {Philip G.}",
booktitle = "Silicon Carbide and Related Materials 2011, ICSCRM 2011",
note = "14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 ; Conference date: 11-09-2011 Through 16-09-2011",
}