Relaxation of magnetization in Cd1-xMnxTe diluted magnetic semiconductors under illumination

M. Smith, A. Dissanayake, H. X. Jiang, L. X. Li

Research output: Contribution to journalArticlepeer-review

Abstract

Relaxation of thermoremanent magnetization (TRM) of Cd1-xMn xTe diluted magnetic semiconductors (DMS) in the spin-glass state have been studied under light illumination. The relaxation of TRM can be described well by a power law decay, M(t)=M(t0)t (t≳t0, t0∼2 s). The variations of the decay parameter α with the illumination light intensity has been measured and a relation which indicates that α is proportional to the photogenerated carrier concentration n has been observed.

Original languageEnglish
Pages (from-to)5734-5736
Number of pages3
JournalJournal of Applied Physics
Volume75
Issue number10
DOIs
StatePublished - 1994

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