Relative stability of HT vs. H* and H2T vs. H*2 in c-C, Si, Ge, and α-Sn and their consequences

Dj M. Maric, M. A. Roberson, S. K. Estreicher

Research output: Contribution to journalConference articlepeer-review

5 Scopus citations

Abstract

Ab-initio Hartree-Fock calculations of the relative stability of tetrahedral interstitial (HT) and bond-centered interstitial (H*) hydrogen in c-C, Si, Ge, and α-Sn reveal that H* is more stable than HT in c-C and Si but less stable than HT in Ge and α-Sn. This change in relative stability affects the amount of H+ present, since H+ is a bond-centered species. This in turn affects the penetration kinetics of H into bulk Si vs. Ge under plasma exposure conditions and the ability of H to passivate shallow dopants. Significant differences in both properties have been reported. Ourresults are also consistent with the differences in muon kinetics between Si and Ge observed by μSR. We also calculate the relative stability of hydrogen dimers (H2T molecule and the H2* complex) in the same hosts.

Original languageEnglish
Pages (from-to)1245-1250
Number of pages6
JournalMaterials Science Forum
Volume143-4
Issue numberpt 2
StatePublished - 1994
EventProceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) - Gmunden, Austria
Duration: Jul 18 1993Jul 23 1993

Fingerprint Dive into the research topics of 'Relative stability of H<sup>T</sup> vs. H* and H<sub>2</sub><sup>T</sup> vs. H*<sub>2</sub> in c-C, Si, Ge, and α-Sn and their consequences'. Together they form a unique fingerprint.

Cite this