Relationship of background carrier concentration and defects in GaN grown by metalorganic vapor phase epitaxy

G. Y. Zhang, Y. Z. Tong, Z. J. Yang, S. X. Jin, J. Li, Z. Z. Gan

Research output: Contribution to journalArticlepeer-review

44 Scopus citations

Fingerprint

Dive into the research topics of 'Relationship of background carrier concentration and defects in GaN grown by metalorganic vapor phase epitaxy'. Together they form a unique fingerprint.

Physics & Astronomy