Reflection high energy electron diffraction investigation and comparison of the initial stage during molecular beam epitaxy of AlN on Si(111) and Si(110) substrates

Vladimir Mansurov, Xiaoyan Xu, Mahesh Pandikunta, Rakib Uddin, Sergey Nikishin

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Abstract

The onset of AlN nucleation on Si(111) and Si(110) surfaces during gas source molecular beam epitaxy with ammonia was carried out by reflection high energy electron diffraction. Exposing the clean Si surfaces to NH3 flux at 600°C yields the formation of crystalline Si3 N4 on both (111) and (110) surfaces. An 8×8 Si3 N4 structure was observed for the Si(111) surface. On the Si(110) surface a 2.87 Å periodic structure was observed for electron beam directed along [001] azimuth and 2.46 Å periodic structure for the [1- 12] azimuth. Together, these periodic structures confirm the formation of Si3 N4 (0001) plane on both Si(111) and Si(110) surfaces.

Original languageEnglish
Article number03C129
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume29
Issue number3
DOIs
StatePublished - May 2011

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