Recent progress on high-efficiency CMOS and SiGe RF power amplifier design

Donald Y.C. Lie, Jerry Tsay, Travis Hall, Teja Nukala, Jerry Lopez, Yan Li

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

The majority of the world's RF wireless power amplifiers (PA) products are still designed in III-V semiconductors today. However, by taking advantage of nm silicon devices and novel RF system-on-a-chip (SoC) design techniques, several groups have recently reported highly-competitive silicon RF PAs in both CMOS and SiGe BiCMOS technologies with performance rivaling those of the III-V RF PAs. We will, therefore, present an up-to-date review on recent design trends of silicon-based PAs, with the focus on high-efficient broadband wireless and 5G PA design.

Original languageEnglish
Title of host publicationPAWR 2016 - Proceedings of the 2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages15-17
Number of pages3
ISBN (Electronic)9781509016846
DOIs
StatePublished - Mar 23 2016
EventIEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, PAWR 2016 - Austin, United States
Duration: Jan 24 2016Jan 27 2016

Publication series

NamePAWR 2016 - Proceedings of the 2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications

Conference

ConferenceIEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, PAWR 2016
Country/TerritoryUnited States
CityAustin
Period01/24/1601/27/16

Keywords

  • 5G
  • CMOS PA
  • Digital PA (DPA)
  • ET-PA
  • Envelope-tracking (ET)
  • Internet-of-Thing (IoT)
  • SiGe PA
  • power amplifier (PA)
  • stacked-FET PA

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