Recent progress on high-efficiency CMOS and SiGe RF power amplifier design

Donald Y.C. Lie, Jerry Tsay, Travis Hall, Teja Nukala, Jerry Lopez, Yan Li

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

The majority of the world's RF wireless power amplifiers (PA) products are still designed in III-V semiconductors today. However, by taking advantage of nm silicon devices and novel RF system-on-a-chip (SoC) design techniques, several groups have recently reported highly-competitive silicon RF PAs in both CMOS and SiGe BiCMOS technologies with performance rivaling those of the III-V RF PAs. We will, therefore, present an up-to-date review on recent design trends of silicon-based PAs, with the focus on high-efficient broadband wireless and 5G PA design.

Original languageEnglish
Title of host publicationPAWR 2016 - Proceedings of the 2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages15-17
Number of pages3
ISBN (Electronic)9781509016846
DOIs
StatePublished - Mar 23 2016
EventIEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, PAWR 2016 - Austin, United States
Duration: Jan 24 2016Jan 27 2016

Publication series

NamePAWR 2016 - Proceedings of the 2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications

Conference

ConferenceIEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, PAWR 2016
CountryUnited States
CityAustin
Period01/24/1601/27/16

Keywords

  • 5G
  • CMOS PA
  • Digital PA (DPA)
  • ET-PA
  • Envelope-tracking (ET)
  • Internet-of-Thing (IoT)
  • SiGe PA
  • power amplifier (PA)
  • stacked-FET PA

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