@inproceedings{3f188ebd060747ac82d872b0abf08555,
title = "Recent progress on high-efficiency CMOS and SiGe RF power amplifier design",
abstract = "The majority of the world's RF wireless power amplifiers (PA) products are still designed in III-V semiconductors today. However, by taking advantage of nm silicon devices and novel RF system-on-a-chip (SoC) design techniques, several groups have recently reported highly-competitive silicon RF PAs in both CMOS and SiGe BiCMOS technologies with performance rivaling those of the III-V RF PAs. We will, therefore, present an up-to-date review on recent design trends of silicon-based PAs, with the focus on high-efficient broadband wireless and 5G PA design.",
keywords = "5G, CMOS PA, Digital PA (DPA), ET-PA, Envelope-tracking (ET), Internet-of-Thing (IoT), SiGe PA, power amplifier (PA), stacked-FET PA",
author = "Lie, {Donald Y.C.} and Jerry Tsay and Travis Hall and Teja Nukala and Jerry Lopez and Yan Li",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, PAWR 2016 ; Conference date: 24-01-2016 Through 27-01-2016",
year = "2016",
month = mar,
day = "23",
doi = "10.1109/PAWR.2016.7440130",
language = "English",
series = "PAWR 2016 - Proceedings of the 2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "15--17",
booktitle = "PAWR 2016 - Proceedings of the 2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications",
}